DOWA ELECTRONICS MATERIALS CO., LTD.

There are provided a silver powder, which is able to form an electrically conductive film having a lower resistance value than that of conventional electrically conductive films when the silver powder is used as the material of an electrically conductive paste which is fired to form the electrically conductive film, and a method for producing the same. A first silver powder having one peak or more, at each of which a frequency is a local maximum value in a volume-based particle size distribution obtained by measuring the first silver powder in a dry process by means of a laser diffraction particle size analyzer, is mixed with a second silver powder having two peaks or more, at each of which a frequency is a local maximum value in a volume-based particle size distribution obtained by measuring the second silver powder in a dry process by means of a laser diffraction particle size analyzer, to produce a silver powder having three peaks or more, at each of which a frequency is a local maximum value in a volume-based particle size distribution obtained by measuring the silver powder in a dry process by means of a laser diffraction particle size analyzer, the silver powder having one peak, at which a frequency is a local maximum value in a volume-based particle size distribution obtained by measuring the silver powder in a wet process by means of a laser diffraction scattering particle size analyzer.

A light-emitting element having high emission output power and light emission efficiency and a method of manufacturing of the same are provided. A light-emitting element according to the present disclosure includes an n-type semiconductor layer; an InAsSbP active layer containing at least In and As on the n-type semiconductor layer; a p-type semiconductor layer that is lattice-matched with the InAsSbP active layer, on the InAsSbP active layer; and a p-type InGaAs window layer that is lattice-mismatched with the p-type semiconductor layer, on the p-type semiconductor layer, wherein the p-type semiconductor layer has a thickness of 20 nm or more and 520 nm or less.

A lithium-containing oxide precursor solution for coating an electrode active material that includes Li in an amount of 0.1 mass % or more and 5.0 mass % or less, at least one element selected from Nb, F, Fe, P, Ta, V, Ge, B, Al, Ti, Si, W, Zr, Mo, S, Cl, Br, and I in an amount of 0.05 mass % or more and 35 mass % or less, and water in an amount of 60 mass % or more and 98.4 mass % or less. The value of absorbance of the solution at a wavelength of 660 nm is 0.1 or less, and the value of surface energy thereof is 72 mN/m or less.

Provided are a silver powder having powder physical properties enabling reduction of volume resistivity after firing and a method of producing this silver powder. The silver powder has a tap density of 4.8 g/mL or more, a TAP/D50 value (value determined by dividing the tap density (g/mL) by the volume-based median diameter (μm)) of not less than 7 and not more than 15, and a specific surface area of not less than 0.75 m 2 /g and not more than 1.3 m 2 /g.

Provided are an ultraviolet light-emitting element with which high light emission output is obtained and a method of producing the same. The ultraviolet light-emitting element includes a transparent substrate having a main surface that constitutes a light extraction surface, an AlN layer on the transparent substrate, an n-type semiconductor layer on the AlN layer, a quantum well-type light-emitting layer on the n-type semiconductor layer, a p-side semiconductor layer directly on the quantum well-type light-emitting layer, and a reflective electrode directly on the p-side semiconductor layer. A side surface of the transparent substrate is a rough surface. Thickness L (nm) of the p-side semiconductor layer satisfies 2L/cos θ=λ(2k+1)/2n.

A silver powder is provided. A value obtained by dividing, by D50, a difference of subtracting D10 from D90 is 1.0 or less, where D10, D50, and D90 are respectively a size in μm corresponding to a cumulative frequency of 10%, a size in μm corresponding to a cumulative frequency of 50%, and a size in μm corresponding to a cumulative frequency of 90% from a smaller particle size side in a volume-based particle size distribution in laser diffraction particle size distribution measurement. A value of Sa×D50 obtained by multiplying Sa by D50 is 17000 nm 2 or more, where Sa is 10 arithmetic mean roughness in nm in surface roughness measurement for a 500 nm×500 nm area of silver particle surfaces.

Provided is a production method for an optical semiconductor element with a high yield by preventing wafer damage caused by grinding. A production method for an optical semiconductor element comprises: a step of forming a laminate of compound semiconductor layers on one main surface of a compound semiconductor substrate having cleavability; and a grinding step of grinding the other main surface of the compound semiconductor substrate, wherein a skewness (Ssk) in surface roughness measurement of a ground surface of the compound semiconductor substrate immediately after the grinding step is positive.

Provided is a III-V compound semiconductor light-emitting element having good light emission output relative to injected power compared to conventional light-emitting elements. The III-V compound semiconductor light-emitting element includes an n-type cladding layer, a light-emitting layer, and a p-type cladding layer in stated order and includes an undoped electron blocking layer between the light-emitting layer and the p-type cladding layer. The light-emitting layer has a layered structure in which a barrier layer and a well layer are repeatedly stacked. At a conduction band, a band gap of the electron blocking layer is larger than band gaps of the barrier layer and the p-type cladding layer, and the band gap of the p-type cladding layer is larger than the band gap of the barrier layer. At a valence band, a band gap of the electron blocking layer is between band gaps of the barrier layer and the cladding layer.

Provided is a method of producing a silver powder and the silver powder that enable preparation of a conductive paste capable of forming a wiring pattern with desired line width and height. A method of producing a silver powder comprises: a disintegration step of disintegrating an agglomerated silver powder in an airflow type mill, and a classification step of classifying a silver powder after the disintegration step, in a pneumatic classifier, wherein the agglomerated silver powder has a moisture content of 2 wt % or more and 20 wt % or less, in the disintegration step, compressed air at a temperature of 80° C. or more and 180° C. or less is supplied to the airflow type mill as supply air, in the classification step, an exhaust of the airflow type mill and the silver powder after the disintegration step are supplied to the pneumatic classifier.

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc/(Dc+Dv) is 65% or more.