SUBSTRATE POLISHING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD FOR CONDITIONING THE SUBSTRATE POLISHING APPARATUS

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001]This application claims priority to Korean Patent Application No. 10-2024-0114512, filed on Aug. 26, 2024, the disclosure of which is incorporated herein in its entirety by reference.

BACKGROUND

[0002]Embodiments of the present disclosure relate to a substrate polishing apparatus, a method for manufacturing a semiconductor device using the same, and a method for conditioning the substrate polishing apparatus, and more particularly, to a device for conditioning a pad of a substrate polishing apparatus, a method for manufacturing a semiconductor device using the same, and a method for conditioning the pad of the substrate polishing apparatus using the same.

[0003]A semiconductor device may be manufactured through various processes. For example, the semiconductor device may be manufactured through a photo process, an etching process, a deposition process, and the like of a substrate. Before the processes, a surface of the substrate may be needed to be planarized. A process of polishing the substrate may be performed so as to planarize a surface of the substrate. The process of polishing may be performed in various methods. For example, a chemical mechanical polishing (CMP) process may be used to planarize the substrate.

SUMMARY

[0004]One or more embodiments provide a device for conditioning a substrate polishing apparatus by using aerosol.

[0005]According to an aspect of one or more embodiments, there is provided a substrate polishing apparatus including a polishing pad, a head portion configured to move a substrate to contact the polishing pad, and a conditioning device on the polishing pad in a vertical direction and spaced apart from the polishing pad, wherein the conditioning device includes a supplier configured to produce a source material, and a sprayer connected to the supplier and configured to generate aerosol from the source material, and wherein the sprayer includes a low pressure chamber, and a spray nozzle configured to spray the aerosol to the polishing pad.

[0006]According to another aspect of one or more embodiments, there is provided a substrate polishing apparatus including a polishing pad, a head portion configured to move a substrate to contact the polishing pad, and a conditioning device on the polishing pad in a vertical direction and spaced apart from the polishing pad, wherein the conditioning device includes a supplier configured to produce a source material, and a sprayer connected to the supplier and configured to generate aerosol from the source material, wherein the supplier includes a first source supply gadget, a cooling tank, and a first connection pipe connected to the first source supply gadget and included in the cooling tank, wherein the sprayer includes a low pressure chamber, and a spray nozzle configured to spray the aerosol to the polishing pad, and wherein a pressure of an inside of the low pressure chamber is less than a pressure of an inside of the first connection pipe.

[0007]According to still another aspect of one or more embodiments, there is provided a method for manufacturing a semiconductor device, the method including preparing a substrate, disposing the substrate in a substrate polishing apparatus, rotating each of the substrate and a polishing pad of the substrate polishing apparatus, moving a lower surface of the substrate to contact an upper surface of the polishing pad, and spraying aerosol toward the upper surface of the polishing pad through a spray nozzle of a conditioning device, wherein the moving of the lower surface of the substrate to contact the upper surface of the polishing pad includes polishing the lower surface of the substrate by being in contact with the upper surface of the polishing pad, and wherein the conditioning device includes a cooling tank, a first connection pipe provided in the cooling tank, and a low pressure chamber connected to the first connection pipe.

BRIEF DESCRIPTION OF DRAWINGS

[0008]Embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:

[0009]FIG. 1 is a perspective view illustrating a substrate polishing apparatus according to one or more embodiments;

[0010]FIG. 2 is a perspective view illustrating a conditioning device and a polishing pad of a polishing portion of a substrate polishing apparatus according to one or more embodiments;

[0011]FIG. 3A is a cross-sectional view illustrating a supply unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments;

[0012]FIG. 3B is a cross-sectional view illustrating a spray unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments;

[0013]FIG. 4A is a flowchart of a method for manufacturing a semiconductor device according to one or more embodiments;

[0014]FIG. 4B is a flowchart of a method for polishing a substrate according to one or more embodiments;

[0015]FIG. 4C is a flowchart of a method for conditioning a substrate polishing apparatus according to one or more embodiments;

[0016]FIG. 5 is a perspective view illustrating a conditioning device, a laser, and a polishing pad of a polishing portion of a substrate polishing apparatus according to one or more embodiments;

[0017]FIGS. 6A and 6B are perspective views illustrating a spray unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments;

[0018]FIGS. 7A, 7B, and 7C are perspective views illustrating a spray unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments;

[0019]FIG. 8 is a plan view illustrating a substrate polishing apparatus according to one or more embodiments;

[0020]FIGS. 9A, 9B, and 9C are perspective views illustrating a cleaning device and a spray unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments; and

[0021]FIG. 10 is a cross-sectional view illustrating a spray unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments.

DETAILED DESCRIPTION

[0022]Hereinafter, embodiments will be described with reference to the accompanying drawings. The same reference numerals and symbols may refer to the same components throughout the entire specification. Embodiments described herein are example embodiments, and thus, the disclosure is not limited thereto.

[0023]It will be understood that, although the terms first, second, third, fourth, etc. may be used herein to describe various elements, components, regions, layers and/or sections (collectively “elements”), these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element described in this description section may be termed a second element or vice versa in the claim section without departing from the teachings of the disclosure.

[0024]It will be understood that when an element or layer is referred to as being “over,” “above,” “on,” “below,” “under,” “beneath,” “connected to” or “coupled to” another element or layer, it can be directly over, above, on, below, under, beneath, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly over,” “directly above,” “directly on,” “directly below,” “directly under,” “directly beneath,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present.

[0025]As used herein, an expression “at least one of” preceding a list of elements modifies the entire list of the elements and does not modify the individual elements of the list. For example, an expression, “at least one of a, b, and c” should be understood as including only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0026]FIG. 1 is a perspective view illustrating a substrate polishing apparatus according to one or more embodiments. FIG. 2 is a perspective view illustrating a conditioning device and a polishing pad of a polishing portion of a substrate polishing apparatus according to one or more embodiments. FIG. 3A is a cross-sectional view illustrating a supply unit (supplier) of a conditioning device of a substrate polishing apparatus according to one or more embodiments. FIG. 3B is a cross-sectional view illustrating a spray unit (sprayer) of a conditioning device of a substrate polishing apparatus according to one or more embodiments.

[0027]Referring to FIGS. 1, 2, 3A and 3B, a substrate polishing apparatus 1 may be provided. The substrate polishing apparatus according to one or more embodiments may be a chemical mechanical polishing (CMP) apparatus that polishes one surface of a substrate. The substrate may be a silicon (Si) wafer, but embodiments are not limited thereto.

[0028]The substrate polishing apparatus may include a polishing portion 10, a head portion 20, a slurry supply device 30 and a conditioning device 40.

[0029]The polishing portion 10 may have a circular plate shape. The polishing portion 10 may include a polishing pad 11 and a platen 13. The polishing pad 11 and the platen 13 may be coupled and connected to each other. However, embodiments are not limited thereto, and, the polishing pad 11 and the platen 13 may be separated from each other. For example, the polishing pad 11 may be separated from the platen 13 after a certain period of time, and may be substituted with a new polishing pad 11, but embodiments not limited thereto.

[0030]The polishing pad 11 may be located on the platen 13. For example, a lower surface of the polishing pad 11 may be in contact with an upper surface of the platen 13. The polishing pad 11 may have a circular plate shape extending along a first direction D1 and a second direction D2. The first direction D1 and the second direction D2 may be parallel to an upper surface of the polishing pad 11 and may cross each other. A rotational center of the polishing pad 11 may be located on the same line (axis) as a rotational center of the platen 13. The polishing pad 11 may rotate together with the platen 13 around the same axis. For example, the polishing pad 11 may rotate around a first rotational axis X1 vertical to the upper surface of the polishing pad 11, and located at the center of the polishing pad 11 and the center of the platen 13.

[0031]The substrate may be located on the polishing pad 11. The upper surface of the polishing pad 11 and a first surface of the substrate may be in contact with each other. The polishing pad 11 may rotate around a rotational axis to polish the substrate. The polishing pad 11 may be divided into a plurality of regions, but embodiments are not limited thereto. For example, the polishing pad 11 may include a polymer material such as polyurethane.

[0032]The platen 13 may be located under the polishing pad 11. The platen 13 may support the polishing pad 11 under the polishing pad 11. The platen 13 may rotate around the first rotational axis X1, which is the same as the rotational axis of the polishing pad 11. The platen 13 may be coupled with the polishing pad 11 to rotate the polishing pad 11. For example, the platen 13 may be rotated by a driving portion including a motor, etc. When the polishing pad 11 has a circular plate shape, the platen 13 may also have a circular plate shape.

[0033]The head portion 20 may be located on the polishing pad 11, and may support and/or rotate the substrate. Through the head portion 20, the substrate may be disposed on the polishing pad 11 such that the first surface of the substrate faces the polishing pad 11. For example, the head portion 20 may bring a lower surface (the first surface) of the substrate into contact with an upper surface of the polishing pad 11. The head portion 20 may rotate independently of the polishing portion 10. For example, the head portion 20 may rotate around a second rotational axis X2 vertical to the upper surface of the head portion 20, and located at the center of the head portion 20. The head portion 20 may include a head support member 21, a head body 23 and a retainer ring 25.

[0034]The head support member 21 may be coupled and connected with the head body 23. Accordingly, the head support member 21 may dispose the substrate coupled and connected with the head body 23 at a certain position on the polishing pad 11. The head support member 21 may include a driving portion, and the like, and the driving portion may rotate the head body 23.

[0035]The head body 23 may be located under the head support member 21. The head body 23 may support the substrate. For example, the head body 23 may support the substrate on a lower surface of the head body 23 by using a vacuum pressure. The head body 23 may include a porous structure exposed on the lower surface of the head body 23, but embodiments are not limited thereto.

[0036]The retainer ring 25 may be located under the head body 23. The retainer ring 25 may be coupled and connected with the head body 23. For example, the retainer ring 25 may be coupled and connected to the lower surface of the head body 23. The retainer ring 25 may be provided on and surround the substrate. Accordingly, the substrate may be located inside the retainer ring 25 on the lower surface of the head body 23.

[0037]The slurry supply device 30 may be disposed spaced apart from the polishing pad 11 in a direction parallel to the upper surface of the polishing pad 11 (the first direction D1 and/or the second direction D2). The slurry supply device 30 may supply the slurry to an upper surface of the polishing pad 11 so as to smoothly perform a polishing process of the substrate.

[0038]The conditioning device 40 may be disposed spaced apart from the polishing portion 10 in a third direction D3 vertical to the upper surface of the polishing portion 10.

[0039]The conditioning device 40 may be disposed spaced apart from the head portion 20 and the slurry supply device 30. The conditioning device 40 may include a supply unit 41 and a spray unit 43 connected to the supply unit 41. The spray unit 43 may be closer to the polishing pad 11 than the supply unit 41.

[0040]The supply unit 41 may include a first source supply gadget 411, a second source supply gadget 413, a cooling tank 415, a first connection pipe 416, a second connection pipe 417, and an exhaust portion 419.

[0041]The first source supply gadget 411 may be provided on a side surface of the cooling tank 415. The first source supply gadget 411 may be connected to the first connection pipe 416. The first source supply gadget 411 may supply a gas source to the first connection pipe 416. For example, the gas source may include at least one of argon (Ar) or nitrogen (N₂). For example, the gas source may include Ar and N₂, and a ratio of Ar to N₂ may be 1:x.

[0042]The first connection pipe 416 may be provided in the cooling tank 415. The first connection pipe 416 may extend along the first direction D1. The first connection pipe 416 is illustrated as a linear pipe on the drawing, but embodiments are not limited thereto. A shape of the first connection pipe 416 may be variously changed.

[0043]The second connection pipe 417 may be connected to the first connection pipe 416. The second connection pipe 417 may be provided on the side surface of the cooling tank 415. The second connection pipe 417 may be connected to the first source supply gadget 411 through the first connection pipe 416. The first connection pipe 416 may be connected to the spray unit 43 through the second connection pipe 417.

[0044]The second source supply gadget 413 may be provided on the side surface of the cooling tank 415. The second source supply gadget 413 may be disposed spaced apart from the first source supply gadget 411. The second source supply gadget 413 may be connected to the cooling tank 415. The second source supply gadget 413 may supply a liquid source to the cooling tank 415. For example, the liquid source may include liquid nitrogen. The cooling tank 415 may perform cooling by supplying the liquid nitrogen to the cooling tank 415.

[0045]The liquid nitrogen may fill the inside of the cooling tank 415 to a certain height LV. The height LV may be higher than an upper surface of the first connection pipe 416 in the third direction D3. The inside of the first connection pipe 416 may be cooled by filling the inside of the cooling tank 415 with the liquid nitrogen to a level higher than the upper surface of the first connection pipe 416 in the third direction D3. Accordingly, the gas source supplied to the inside of the first connection pipe 416 may be changed to the source material. For example, the source material may include a material having a different phase from the gas source. In the present specification, the wording, “A and B are different phases” indicate that A and B have different states of a material (for example, solid, liquid, and gas). Specifically, the source material may include a cryogenic fluid. The source material formed in the first connection pipe 416 may be supplied to the spray unit 43 through the second connection pipe 417.

[0046]The spray unit 43 may include a low pressure chamber 431, a spray nozzle 433 and a pump line 435. The pump line 435 may be provided on a side surface of the low pressure chamber 431. The pump line 435 may be connected to the low pressure chamber 431. A pressure of the inside of the low pressure chamber 431 may be controlled by the pump line 435. Through the pump line 435, the pressure of the inside of the low pressure chamber 431 may be controlled to be lower than a pressure of the inside of the first connection pipe 416.

[0047]The spray nozzle 433 may be provided under the low pressure chamber 431. The spray nozzle 433 may be connected to the low pressure chamber 431. The spray nozzle 433 may have a spray hole having a perforated bottom. The spray nozzle 433 may be adjacent to the polishing pad 11, and may be spaced apart from the polishing pad 11 in the third direction D3.

[0048]The source material produced by the supply unit 41 may be supplied to the low pressure chamber 431. The source material may be changed to aerosol AZ in the low pressure chamber 431. The aerosol AZ may be defined as a state in which fine solid particles are floated in the air or other gases. For example, the source material supplied to the low pressure chamber 431 may be changed to another state of the material due to adiabatic expansion. For example, the source material supplied to the low pressure chamber 431 may be changed to the aerosol AZ due to the adiabatic expansion. In this case, for example, the pressure of the inside of the low pressure chamber 431 may be controlled, through the pump line 435, to be lower than a pressure in which the source material may adiabatically expand.

[0049]The aerosol AZ formed inside the low pressure chamber 431 may be sprayed toward an upper surface of the polishing pad 11 through the spray nozzle 433. Accordingly, a by-product formed on the upper surface of the polishing pad 11 may be collided with the fine solid material in the aerosol AZ in a process of polishing the substrate. As a result, the by-product may be removed on the upper surface of the polishing pad 11.

[0050]According to one or more embodiments, the source material generated by the supply unit 41 of the conditioning device 40 may be changed to the aerosol AZ by the spray unit 43 of the conditioning device 40. The aerosol AZ may be sprayed toward the upper surface of the polishing pad 11 through the spray nozzle 433 of the spray unit 43 to perform a process of conditioning the polishing pad 11 of the substrate polishing apparatus 1. Accordingly, the conditioning device 40 according to one or more embodiments may condition the upper surface of the polishing pad 11 by utilizing the aerosol AZ without a disk including diamond tips. As a result, the substrate polishing apparatus according to one or more embodiments may be free from deterioration of conditioning capability caused by abrasion of, for example, diamond tips that are included in a disk conditioner of related art, generation of conditioning distribution caused by abrasion difference of the diamond tips, a process defect caused by dislodging a disk including the diamond tips during the conditioning process, and a process defect caused by particles generated from the diamond tips. Accordingly, the conditioning capability and the conditioning distribution of the conditioning device of the substrate polishing apparatus, and productivity of a semiconductor manufacturing may be improved.

[0051]FIG. 4A is a flowchart of a method for manufacturing a semiconductor device according to one or more embodiments. FIG. 4B is a flowchart of a method for polishing a substrate according to one or more embodiments. FIG. 4C is a flowchart of a method for conditioning a substrate polishing apparatus according to one or more embodiments.

[0052]Referring to FIGS. 1 and 4A, a method (MS) for manufacturing a semiconductor device may be a method for manufacturing a semiconductor device by using the substrate. The method (MS) for manufacturing a semiconductor device may include an operation (MS1) of preparing a substrate, an operation (MS2) of polishing the substrate and an operation (MS3) of performing the subsequent process for the polished substrate.

[0053]The operation (MS1) of preparing a substrate may include an operation of preparing the substrate undergoing some processes of manufacturing the semiconductor device. For example, the operation (MS1) of preparing a substrate may include an operation of preparing a semiconductor wafer undergoing a photo process, a deposition process, a developing process, or the like before the polishing process.

[0054]The operation (MS2) of polishing the substrate may be a process of polishing the prepared substrate. The operation (MS2) of polishing the substrate may be performed by a method (PS) for polishing a substrate in FIG. 4B. Description for this will be made later in detail.

[0055]The operation (MS3) of performing the subsequent process for the polished substrate may include performing another process of manufacturing a semiconductor device for the substrate to be removed from the substrate polishing apparatus 1. For example, another photo process, deposition process, etching process, packaging process, or the like may be performed for the substrate undergoing the polishing process.

[0056]Referring to FIGS. 1 and 4B, a method (PS) for polishing a substrate may be provided. The method (PS) for polishing a substrate may provide a method for performing the operation (MS2) of polishing the substrate of the method (MS) for manufacturing a semiconductor device described with reference to FIG. 4A. For example, the method (PS) for polishing a substrate may provide a method for polishing one surface of the substrate to planarize the same. The method (PS) for polishing a substrate may include an operation (PS1) of disposing the substrate in the substrate polishing apparatus 1, an operation (PS2) of rotating each of the polishing pad 11 and the substrate, an operation (PS3) of bringing the substrate into contact with the polishing pad 11 and an operation (PS4) of removing the substrate from the polishing pad 11.

[0057]Referring to FIGS. 1 and 4C, a method (CS) for conditioning the substrate polishing apparatus 1 may be provided. For example, the method (CS) for conditioning the substrate polishing apparatus 1 may be performed in-situ during the method (PS) for polishing the substrate. For another example, the method (CS) for conditioning the substrate polishing apparatus 1 may be performed after completing the method (PS) for polishing the substrate (for example, after the operation (PS4) of removing the substrate from the polishing pad 11), but embodiments are not limited thereto. The method (CS) for conditioning the substrate polishing apparatus 1 may be performed at various times.

[0058]The method (CS) for conditioning the substrate polishing apparatus 1 may include a first operation (CS1) of supplying liquid nitrogen to a cooling tank 15 through the second source supply gadget 413, a second operation (CS2) of supplying gas to the first connection pipe 416 through the first source supply gadget 411, a third operation (CS3) of supplying the source material to the low pressure chamber 431 through the second connection pipe 417 and a fourth operation (CS4) of spraying the aerosol AZ through the spray nozzle 433.

[0059]Through the first operation (CS1), the cooling tank 415 may perform cooling through the liquid nitrogen. Through the second operation (CS2), the gas may be cooled by the cooling tank 415, and may be changed to the source material including the cryogenic fluid. Through the third operation (CS3), in the low pressure chamber 431, the source material may adiabatically expand, and thus may be changed to the aerosol AZ. The aerosol AZ may include fine solid materials (or particles). Through the fourth operation (CS4), the aerosol AZ may be sprayed toward the upper surface of the polishing pad 11 through the spray nozzle 433. Accordingly, during the process of polishing the substrate, the process of conditioning the upper surface of the polishing pad 11 of the substrate polishing apparatus 1 may be performed by removing the by-products formed on the upper surface of the polishing pad 11.

[0060]FIG. 5 is a perspective view illustrating a conditioning device, a laser, and a polishing pad of a polishing portion of a substrate polishing apparatus according to one or more other embodiments.

[0061]Referring to FIGS. 1 and 5, the substrate polishing apparatus 1 may further include a laser 50. For example, the laser 50 may emit light having an infrared (IR) wavelength region.

[0062]The laser 50 may emit a beam 51 toward the upper surface of the polishing pad 11 adjacent to the spray hole of the spray nozzle 433. Accordingly, after the polishing pad 11 is conditioned, a low-temperature fine solid material in the aerosol AZ (see FIG. 3B) may be heated by the beam 51 of the laser 50 to be sublimated, liquefied, or vaporized. As a result, a process defect caused by existence of the solid material on the upper surface of the polishing pad 11 during the process of polishing the substrate may be prevented.

[0063]In addition, the beam 51 of the laser 50 may prevent dew condensation on the upper surface of the polishing pad 11 caused by the aerosol AZ (see FIG. 3B). Accordingly, a process defect capable of being caused by the dew condensation during the process of polishing the substrate may be prevented.

[0064]FIGS. 6A and 6B are perspective views illustrating a spray unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments.

[0065]Referring to FIGS. 6A and 6B, a shape of the low pressure chamber 431 of the spray unit 43 described with reference to FIGS. 1 and 2 may be variously changed.

[0066]Referring to FIG. 6A, the low pressure chamber 431 may have a cubic shape. As another example, referring to FIG. 6B, the low pressure chamber 431 may have a spherical shape.

[0067]The low pressure chamber 431 is illustrated as a shape of a cylinder, a cube, or a sphere in FIGS. 1, 2, 6A and 6B, but embodiments are not limited thereto. The shape, the size, and the like of the low pressure chamber 431 may be variously changed.

[0068]FIGS. 7A to 7C are perspective views illustrating a spray unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments.

[0069]Referring to FIGS. 7A to 7C, a shape, a number, a disposition method, and the like of the spray nozzle 433 of the spray unit 43 described with reference to FIGS. 1 and 2 may be variously.

[0070]Referring to FIG. 7A, a diameter DS1 of an entrance hole and a diameter DS2 of a spray hole of the spray nozzle 433 may be different from each other. The entrance hole of the spray nozzle 433 may be connected to the low pressure chamber 431. The diameter DS2 of the spray hole of the spray nozzle 433 may be greater than the diameter DS1 of the entrance hole of the spray nozzle 433. A diameter of the spray nozzle 433 may increase in a direction from the low pressure chamber 431 to the polishing pad 11. Accordingly, an amount of the aerosol AZ sprayed through the spray nozzle 433 may be greater in FIG. 7A than in FIGS. 1 and 2.

[0071]Referring to FIG. 7B, the spray nozzle 433 may have a shape of a rectangular parallelepiped having a perforated upper surface and a perforated lower surface.

[0072]Referring to FIG. 7C, the spray nozzle 433 may include a plurality of spray nozzles 433 under the low pressure chamber 431. Three spray nozzles 433 are illustrated in the drawing, but embodiments are not limited thereto. At least two spray nozzles 433 may be provided under the low pressure chamber 431. Compared to FIGS. 1 and 2, the amount of the aerosol AZ sprayed through the spray nozzles 433 may increase by providing the plurality of spray nozzles 433.

[0073]A shape, a number, a disposition method, and the like of the spray nozzle 433 according to one or more embodiments are not limited to what is illustrated in FIGS. 7A to 7C. The shape, the number, the disposition method, and the like of the spray nozzle 433 may be variously changed.

[0074]FIG. 8 is a plan view illustrating a substrate polishing apparatus according to one or more embodiments. FIGS. 9A to 9C are perspective views illustrating a cleaning device and a spray unit of a conditioning device of a substrate polishing apparatus according to one or more embodiments.

[0075]Referring to FIGS. 8 and 9A to 9C, the substrate polishing apparatus 1 may further include a cleaning device 60. The cleaning device 60 may be spaced apart from the polishing portion 10 in the first direction D1 and/or the second direction D2, and may not overlap the polishing portion 10 in the third direction D3. The conditioning device 40 may further include an arm 45. The arm 45 may be coupled and connected with an upper portion of the low pressure chamber 431 of the spray unit 43. The spray unit 43 may move over the cleaning device 60 by rotating the arm 45. Accordingly, the spray nozzle 433 of the spray unit 43 may overlap the cleaning device 60 in the third direction D3. FIGS. 9A to 9B illustrate that the spray unit 43 moves over the cleaning device 60 by rotating the arm 45.

[0076]The cleaning device 60 may include a cleaning body 61 and a cleaning spray nozzle 63. The cleaning spray nozzle 63 may be provided on the cleaning body 61, and may be connected to the cleaning body 61. For example, each of the cleaning body 61 and the cleaning spray nozzle 63 may have a cylindrical shape. The cleaning spray nozzle 63 may have a spray hole facing the spray nozzle 433 of the spray unit 43. A cleaning material 65 supplied from the cleaning body 61 may be sprayed toward the spray nozzle 433 of the spray unit 43 through the cleaning spray nozzle 63. Accordingly, an inside of the spray nozzle 433 of the spray unit 43 may be cleaned by the cleaning material.

[0077]Referring to FIGS. 8 and 9A, a plurality of cleaning spray nozzles 63 may be provided on the cleaning body 61 in plurality. Three cleaning spray nozzles 63 are illustrated in the drawing, but embodiments are not limited thereto. The cleaning material 65 sprayed from the cleaning spray nozzle 63 may be sprayed toward the spray nozzle 433 of the spray unit 43 in a direction vertical to an upper surface of the cleaning body 61.

[0078]Referring to FIGS. 8 and 9B, the cleaning device 60 may include an outer wall 67 provided on and surrounding the cleaning spray nozzles 63 on the cleaning body 61. For example, an uppermost end of the outer wall 67 may be higher than an uppermost end of the cleaning spray nozzle 63 in the third direction D3. Accordingly, during a cleaning process of the spray nozzle 433 of the spray unit 43, the outer wall 67 may block the cleaning material 65 such that the cleaning material 65 does not have an unnecessary effect on other components of the substrate polishing apparatus 1.

[0079]Referring to FIGS. 8 and 9C, spray holes of the cleaning spray nozzles 63 may be formed to face different directions. Accordingly, the cleaning spray nozzles 63 may spray the cleaning material 65 toward the different directions. For example, one of the cleaning spray nozzles 63 may spray the cleaning material 65 in a direction vertical to an upper surface of the cleaning body 61. For example, another of the cleaning spray nozzles 63 may spray the cleaning material 65 in one direction crossing, on the same plane, the direction vertical to the upper surface of the cleaning body 61. For example, still another of the cleaning spray nozzles 63 may spray the cleaning material 65 in another direction crossing, on the same plane, the direction vertical to the upper surface of the cleaning body 61.

[0080]FIG. 10 is a cross-sectional view illustrating a spray unit of a conditioning device of a substrate polishing apparatus according to one or more other embodiments.

[0081]The spray unit 43 may further include a sliding shutter 437 inside the low pressure chamber 431. The sliding shutter 437 may be provided inside the low pressure chamber 431 adjacent to the entrance hole of the spray nozzle 433. The sliding shutter 437 may move left and right in the first direction D1. Accordingly, the sliding shutter 437 may block the entrance hole of the spray nozzle 433 such that the low pressure chamber 431 and the spray nozzle 433 are not connected to each other, and may not block the entrance hole of the spray nozzle 433 such that the low pressure chamber 431 and the spray nozzle 433 are connected to each other.

[0082]For example, when the spray nozzle 433 is cleaned through the cleaning device 60 described with reference to FIGS. 8 and 9A to 9B, the sliding shutter 437 may be utilized. For example, when the spray nozzle 433 is cleaned through the cleaning material 65, the sliding shutter 437 may block the entrance hole of the spray nozzle 433. Accordingly, the cleaning material 65 is not sprayed to the inside of the low pressure chamber 431. As a result, contamination of the low pressure chamber 431 caused by the cleaning material 65 may be prevented.

[0083]According to one or more embodiments, a source material generated from a supply unit of a conditioning device may be changed to aerosol through a spray unit of the conditioning device. The aerosol may be sprayed to a polishing pad through a spray nozzle of the spray unit. Accordingly, the conditioning device according to one or more embodiments may condition an upper surface of the polishing pad by utilizing the aerosol without a disk including diamond tips. As a result, a substrate polishing apparatus according to one or more embodiments be free from deterioration of conditioning capability caused by abrasion of the diamond tips, generation of conditioning distribution caused by abrasion difference of the diamond tips, a process defect caused by dislodging the disk including the diamond tips during a conditioning process, and a process defect caused by particles generated from the diamond tips. Accordingly, the conditioning capability and the conditioning distribution of the conditioning device of the substrate polishing apparatus, and productivity of a semiconductor manufacturing may be improved.

[0084]While embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims and their equivalents.