CHEMICAL MECHANICAL POLISHING PAD, AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

CROSS-REFERENCE TO RELATED APPLICATION

[0001]This application is based on and claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2024-0043678, filed on Mar. 29, 2024 in the Korean Intellectual Property office, the disclosure of which is incorporated by reference herein in its entirety.

BACKGROUND

[0002]Example embodiments of the disclosure relate to a chemical mechanical polishing pad including grooves, and a substrate processing apparatus including the chemical mechanical polishing pad.

[0003]When semiconductor devices are fabricated, a chemical mechanical polishing process using a chemical mechanical polishing apparatus may be used to flatten substrates. In addition, the chemical mechanical polishing process may include a process of polishing a surface of the substrate by using a chemical mechanical interaction between the substrate and the chemical mechanical polishing pad. On the other hand, various patterns of grooves may be formed in the chemical mechanical polishing pad for smooth supply of a slurry abrasive material.

[0004]Information disclosed in this Background section has already been known to or derived by the inventors before or during the process of achieving the embodiments of the present application, or is technical information acquired in the process of achieving the embodiments. Therefore, it may contain information that does not form the prior art that is already known to the public.

SUMMARY

[0005]One or more example embodiments provide a chemical mechanical polishing pad having a uniform abrasion ratio while a depth of a groove formed in the chemical mechanical polishing pad is maintained in a chemical mechanical polishing process, and a substrate processing apparatus including the chemical mechanical polishing pad.

[0006]Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.

[0007]According to an aspect of an example embodiment, a chemical mechanical polishing pad may include a lower pad body, an upper pad body on an upper surface of the lower pad body and including a first protrusion and a second protrusion, the first protrusion and the second protrusion protruding in a first direction, a groove between the first protrusion and the second protrusion and extending in a second direction intersecting the first direction, at least one dissolution layer in the groove, and at least one protection layer in the groove, where the at least one protection layer and the at least one dissolution layer are configured to be dissolved by an aqueous solution, the at least one dissolution layer is configured to be dissolved by the aqueous solution at a first temperature, and the at least one protection layer is configured to be dissolved by the aqueous solution at a second temperature that is higher than the first temperature.

[0008]According to an aspect of an example embodiment, a substrate processing apparatus may include a polishing platen, a chemical mechanical polishing pad on an upper surface of the polishing platen, and a groove depth adjuster above the chemical mechanical polishing pad, where the chemical mechanical polishing pad may include a lower pad body on the upper surface of the polishing platen, an upper pad body on an upper surface of the lower pad body and including a first protrusion and a second protrusion, the first protrusion and the second protrusion protruding in a first direction, a groove between the first protrusion and the second protrusion and extending in a second direction intersecting the first direction, at least one dissolution layer in the groove, and at least one protection layer in the groove, and where the groove depth adjuster may include a groove depth measurement member configured to measure a depth of the groove in the first direction, and a groove protection layer removal member configured to remove the at least one protection layer from the groove.

[0009]According to an aspect of an example embodiment, a substrate processing apparatus may include a polishing platen configured to rotate about a rotation axis extending in a first direction, a chemical mechanical polishing pad on an upper surface of the polishing platen, a polishing head facing the chemical mechanical polishing pad in the first direction, a slurry supplier above the chemical mechanical polishing pad and spaced apart from the polishing head in a second direction intersecting the first direction, the slurry supplier configured to discharge polishing slurry toward an upper surface of the chemical mechanical polishing pad, a pad conditioner on the chemical mechanical polishing pad and configured to clean the chemical mechanical polishing pad, and a groove depth adjuster above the chemical mechanical polishing pad, where the chemical mechanical polish pad may include a lower pad body on the upper surface of the polishing platen, an upper pad body on an upper surface of the lower pad body and including a first protrusion and a second protrusion, the first protrusion and the second protrusion protruding in a first direction, a groove between the first protrusion and the second protrusion and extending in the second direction, a plurality of dissolution layers in the groove, and a plurality of protection layers respective on upper surfaces of the plurality of dissolution layers, where the groove depth adjuster may include a groove depth measurement member configured to measure a depth of the groove in the first direction, and a groove protection layer removal member configured to remove at least one protection layer of the plurality of protection layers from the groove, and where the plurality of dissolution layers are configured to be dissolved by an aqueous solution at a first temperature and the plurality of protection layers are configured to be dissolved by the aqueous solution at a second temperature higher than the first temperature.

BRIEF DESCRIPTION OF DRAWINGS

[0010]The above and other aspects, features, and advantages of certain example embodiments of the present disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0011]FIG. 1 is a cross-sectional view of a substrate processing apparatus according to one or more embodiments;

[0012]FIG. 2 is a plan view of a chemical mechanical polishing pad of a substrate processing apparatus according to one or more embodiments;

[0013]FIG. 3 is a cross-sectional view of a partial area of a chemical mechanical polishing pad according to one or more embodiments;

[0014]FIG. 4 is a schematic diagram of a groove depth measurement member according to one or more embodiments;

[0015]FIG. 5 is a diagram of a groove depth measurement member according to one or more embodiments;

[0016]FIG. 6 is a diagram of a groove protection layer removal member according to one or more embodiments;

[0017]FIG. 7 is a diagram of a groove protection layer removal member according to one or more embodiments;

[0018]FIG. 8 is a diagram of a groove depth adjuster according to one or more embodiments;

[0019]FIG. 9 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments;

[0020]FIG. 10 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments;

[0021]FIG. 11 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments;

[0022]FIG. 12 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments;

[0023]FIG. 13 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments; and

[0024]FIG. 14 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments.

DETAILED DESCRIPTION

[0025]Hereinafter, example embodiments of the disclosure will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and redundant descriptions thereof will be omitted. The embodiments described herein are example embodiments, and thus, the disclosure is not limited thereto and may be realized in various other forms.

[0026]As used herein, expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. For example, the expression, “at least one of a, b, and c,” should be understood as including only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0027]It will be understood that when an element or layer is referred to as being “over,” “above,” “on,” “below,” “under,” “beneath,” “connected to” or “coupled to” another element or layer, it can be directly over, above, on, below, under, beneath, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly over,” “directly above,” “directly on,” “directly below,” “directly under,” “directly beneath,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present.

[0028]FIG. 1 is a cross-sectional view of a substrate processing apparatus according to one or more embodiments. FIG. 2 is a plan view of a chemical mechanical polishing pad of a substrate processing apparatus according to one or more embodiments. FIG. 3 is a cross-sectional view of a partial area of a chemical mechanical polishing pad according to one or more embodiments

[0029]Referring to FIGS. 1 through 3, the substrate processing apparatus 1 may include a polishing platen 20, the chemical mechanical polishing pad 100, a polishing head 10, a slurry supplier 40, a pad conditioner 30, and a groove depth adjuster 50.

[0030]The substrate processing apparatus 1 may be configured to perform a polishing process on a substrate W (for example, a chemical mechanical polishing process). In this case, the substrate W may be referred to as the substrate or a stacked structure including the substrate W and a material layer formed on a surface of the substrate W. In addition, the term “surface of the substrate W” may indicate a surface of the substrate W itself or a surface of a material layer formed on the substrate W.

[0031]The polishing platen 20 may have a plate shape. For example, the polishing platen 20 may have a circular plate shape. For example, the polishing platen 20 may include a metal. The polishing platen 20 may support the chemical mechanical polishing pad 100. An upper surface of the polishing platen 20, on which the chemical mechanical polishing pad 100 is placed, may include a flat surface. The polishing platen 20 may have a greater footprint than a footprint of the chemical mechanical polishing pad 100.

[0032]Hereinafter, in the drawings, an X-axis direction and a Y-axis direction may represent directions parallel with the upper surface or a lower surface of the polishing platen 20, and the X-axis direction may be perpendicular to the Y-axis direction. A Z-axis direction may represent a direction perpendicular to the surface of the upper surface or the lower surface of the polishing platen 20, and may indicate a rotation axis of the polishing platen 20. In other words, the Z-axis direction may include a direction perpendicular to an X-Y plane. Furthermore, various directions of components may be described with respect to a radial direction, of which may be represented by an X-axis direction and a Y-axis direction in cross-sectional views. The radial direction may intersect the Z-axis direction.

[0033]In addition, in the drawings below, the first horizontal direction may refer to the X-axis direction, the second horizontal direction may refer to the Y-axis direction, and the vertical direction may refer to the Z-axis direction.

[0034]The polishing platen 20 may include a rotation table configured to rotate with respect to a rotation axis in parallel with a vertical direction Z. The polishing platen 20 may receive rotational power from a motor arranged on a lower base, and accordingly, may rotate in a predefined direction, such as a clockwise direction or a counterclockwise direction, by the rotation axis extending perpendicular to a surface of the polishing platen 20. The polishing platen 20 may be connected to a platen drive shaft configured to be rotated by an actuator such as a rotating motor, and may be configured to be rotated by the platen drive shaft.

[0035]According to one or more embodiments, the polishing platen 20 may include one or more fluid channels configured to allow a thermostatic fluid to flow inside the polishing platen 20. At least a portion of the fluid channel may extend to an area close to the upper surface of the polishing platen 20. For example, at least a portion of the fluid channel may extend in a direction in parallel with the upper surface of the polishing platen 20 (for example, an X direction and/or a Y direction), to an area close to the upper surface of the polishing platen 20. The fluid channel may be configured to receive a thermostatic fluid (for example, a cooling fluid or a heating fluid) from a fluid supply device. The fluid supply device may be configured to heat or cool the temperature control fluid to maintain a preset temperature, and supply the thermostatic fluid at the preset temperature to the fluid channel. The fluid supply device may include a fluid source in which the thermostatic fluid is stored, a heating device configured to heat the thermostatic fluid, a cooling device configured to cool the thermostatic fluid, and a pump. For example, the thermostatic fluid may include water, ethylene glycol, silicone oil, liquid Teflon, or a mixture thereof. As the thermostatic fluid flows into the fluid channel of the polishing platen 20, the temperature of the polishing platen 20 and the temperature of the chemical mechanical polishing pad 100 arranged on the polishing platen 20 may be adjusted. For example, as the heating fluid is supplied to the fluid channel of the polishing platen 20, the temperature of the polishing platen 20 and the temperature of the chemical mechanical polishing pad 100 may rise to a target temperature. For example, as the cooling fluid is supplied to the fluid channel of the polishing platen 20, the temperature of the polishing platen 20 and the temperature of the chemical mechanical polishing pad 100 may fall to target temperatures. The temperature control of the polishing platen 20 by using the thermostatic fluid may be performed to provide a temperature condition suitable for the polishing process of the substrate W.

[0036]The chemical mechanical polishing pad 100 may be arranged on the upper surface of the polishing platen 20. The chemical mechanical polishing pad 100 may contact the upper surface of the polishing platen 20, and at least partially cover the upper surface of the polishing platen 20.

[0037]The chemical mechanical polishing pad 100 may rotate clockwise or counterclockwise with respect to a Z axis according to the rotation of the polishing platen 20. When the polishing process is performed, the chemical mechanical polishing pad 100 may directly contacting a polishing object, and chemically and/or mechanically polish a surface of the polishing object by using nano polishing particles in a polishing slurry. A polishing surface of the chemical mechanical polishing pad 100 may rub against the polishing object to polish the polishing object. In this case, the polishing object may include, for example, the substrate W, and the polishing surface of the chemical mechanical polishing pad 100 may include, for example, a surface directly contacting the polishing object. According to one or more embodiments, the chemical mechanical polishing pad 100 may have a thickness of hundreds to thousands of micrometers.

[0038]The chemical mechanical polishing pad 100 may include a lower pad body 110 and an upper pad body 120, as illustrated in FIG. 3. The lower pad body 110 may be arranged on the upper surface of the polishing platen 20, and the upper pad body 120 may be arranged on the upper surface of the lower pad body 110. The upper pad body 120 may function as a polishing layer which rubs against the substrate W during the polishing process on the substrate W, and the lower pad body 110 may function as a support layer supporting the upper pad body 120. According to one or more embodiments, the lower pad body 110 and the upper pad body 120 may each include a polymer layer including pores. According to one or more embodiments, each of the lower pad body 110 and the upper pad body 120 may include a polymer, for example, polyurethane. Polyurethane may be obtained, for example, by mixing a curing agent with a polyurethane precursor obtained by a reaction of an isocyanate compound and a polyol compound. The isocyanate compound may include, for example, an aliphatic isocyanate and/or an aromatic isocyanate, diisocyanate, ethylene diisocyanate, hexamethylene diisocyanate, bis(isocyanatomethyl)cyclohexane, norbornane diisocyanate, isophorone diisocyanate, dicyclohexylmethane diisocyanate, toluene diisocyanate, naphthalene diisocyanate, phenylene diisocyanate, tolidine diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, xylene diisocyanate, or a combination thereof, but is not limited thereto. The polyol compound may include, for example, polyether polyol, polyester polyol, polycarbonate polyol, polyester polycarbonate polyol, acrylic polyol, or a combination thereof, but is not limited thereto.

[0039]In addition, each of the upper pad body 120 and the lower pad body 110 may include an acrylonitrile butadiene styrene copolymer (ABC) resin. The ABS resin may be acrylonitrile, butadiene, styrene, or a combination thereof, but is not limited thereto.

[0040]The upper pad body 120 may include a protrusion 125 protruding upward in the vertical direction Z from the upper surface of the upper pad body 120. The upper pad body 120 may include a plurality of protrusions 125. The plurality of protrusions 125 may be spaced apart from each other in a radial direction (e.g., an X direction or a Y direction when viewed in cross-section). A space between each of the plurality of protrusions 125 may be defined as a groove 127. In other words, a groove 127 may be formed between each of the plurality of protrusions 125. For example, the groove 127 may be defined as a space between each of the plurality of protrusions 125 in the radial direction (e.g., an X direction or a Y direction when viewed in cross-section). That is, a groove 127 may be defined by a space between each pair of protrusions 125 among the plurality of protrusions 125. Although the upper pad body 120 may include a plurality of grooves 127, a single groove 127 is described below for convenience of explanation.

[0041]According to one or more embodiments, the groove 127 may also be defined as a recess extending down the vertical direction Z from the upper surface of the upper pad body 120. According to one or more embodiments, the groove 127 may be formed to have a circular shape in a plan view as illustrated in FIG. 2. The groove 127 may also be referred to as a pattern of the chemical mechanical polishing pad 100.

[0042]A protection layer 140 and a dissolution layer 150 may be provided in the groove 127. According to one or more embodiments, a plurality of protection layers 140 and a plurality of dissolution layers 150 may be provided. A plurality of protection layers 140 and a plurality of dissolution layers 150 may be alternately stacked in the groove 127 of the upper pad body 120 in the vertical direction Z. For example, the dissolution layer 150 may be formed first in the groove 127 of the upper pad body 120, the protection layer 140 may be formed on the upper surface of the dissolution layer 150, the dissolution layer 150 may be formed again on the upper surface of the protection layer 140, and the protection layer 140 may be formed again on the upper surface of the dissolution layer 150. Accordingly, the plurality of protection layers 140 and the plurality of dissolution layers 150 may be alternately stacked in the groove 127 of the upper pad body 120. According to one or more embodiments, when the plurality of protection layers 140 and the plurality of dissolution layers 150 are alternately stacked, the plurality of protection layers 140 may be stacked on the uppermost end, and the plurality of dissolution layers 150 may be provided on the lowermost end. That is, within the groove 127, the top layer may be a protection layer 140, and the bottom layer may be a dissolution layer 150. According to one or more embodiments, one dissolution layer 150 and one protection layer 140 of the layers which are alternately stacked, may be defined as one set 1415, and a plurality of sets 1415 may be provided in the groove 127 of the upper pad body 120. For example, as illustrated in FIG. 3, three sets 1415 may be provided in the groove 127 of the upper pad body 120. However, the number of sets 1415 provided in the groove 127 of the upper pad body 120 is not limited thereto, and one, two, or four or more sets 1415 may be provided in the groove 127 of the upper pad body 120.

[0043]According to one or more embodiments, a thickness ratio of the protection layer 140 to the dissolution layer 150 in the vertical direction Z may range from about 1:2 to about 1:10. However, the thickness ratio of the protection layer 140 and the dissolution layer 150 is not limited thereto.

[0044]In one or more embodiments, one dissolution layer 150 and one protection layer 140 may also be provided inside the groove 127 of the upper pad body 120. In other words, only one set 1415 may be provided inside the groove 127 of the upper pad body 120. This is described in detail with reference to FIGS. 9 through 11.

[0045]The protection layer 140 may cover the upper surface of the dissolution layer 150. The protection layer 140 may cover the entire upper surface of the dissolution layer 150. The protection layer 140 may be configured to seal the dissolution layer 150. Accordingly, the dissolution layer 150 may be blocked from contacting an external liquid by the protection layer 140. The upper surface of the dissolution layer 150 may be sealed from the outside by the protection layer 140, and side surfaces of the dissolution layer 150 may be sealed from the outside by side surfaces of the protrusion 125 of the upper pad body 120. As the dissolution layer 150 is sealed by the protection layer 140 and the protrusion 125 of the upper pad body 120, during the manufacturing process, liquid provided to the chemical mechanical polishing pad 100 may not contact the dissolution layer 150.

[0046]According to one or more embodiments, the protection layer 140 may be configured to be removed in an environment of a predefined temperature or higher. For example, the protection layer 140 may be melted by an aqueous solution in an environment of a predefined temperature T1 or higher. The aqueous solution may include an aqueous solution provided during the manufacturing process, and may be a slurry or a cleaning solution. In one or more embodiments, the protection layer 140 may be configured to be removed by external stimuli. For example, the protection layer 140 may be removed by a laser or dissolved by a particular aqueous solution to be removed.

[0047]According to one or more embodiments, the protection layer 140 may include a material dissolvable in the aqueous solution when the temperature rises. For example, the protection layer 140 may include a 2-oxazoline-based polymer.

[0048]The dissolution layer 150 may be configured to be dissolved from the aqueous solution. In one or more embodiments, the dissolution layer 150 may be configured to be dissolved from the aqueous solution regardless of the temperature. When the protection layer 140 is removed, the dissolution layer 150 may be exposed to the aqueous solution, and dissolved by the aqueous solution to be removed.

[0049]According to one or more embodiments, the dissolution layer 150 may include at least one of polyacrylic acid, polymaleic anhydride, polymethacrylic acid, polyethylene oxide, polyamino acid, polysaccharide, polyacrylate, polyacrylate, and polyethylene glycol.

[0050]The groove depth adjuster 50 may be above the chemical mechanical polishing pad 100. The groove depth adjuster 50 may move in the horizontal direction (X direction or Y direction) or in a radial direction in a state of being spaced apart from the upper surface of the chemical mechanical polishing pad 100 by a predefined interval in the vertical direction Z. The area in the X-Y plane of the groove depth adjuster 50 may be less than the area in the X-Y plane of the chemical mechanical polishing pad 100.

[0051]The groove depth adjuster 50 may include a groove depth measurement member 51, a groove protection layer removal member 55, and a controller 57. According to one or more embodiments, the groove depth measurement member 51 may be configured to measure a depth D of the groove 127 of the upper pad body 120. According to one or more embodiments, the groove depth measurement member 51 may be configured to measure a distance in the vertical direction Z from an upper surface of a material provided in the upper pad body 120 (for example, a material at the uppermost end of the protection layer 140 or the dissolution layer 150) to the upper surface of the protrusion 125 of the upper pad body 120. For example, when the plurality of protection layers 140 and the plurality of dissolution layers 150 are alternately stacked in the groove 127 of the upper pad body 120, the groove depth measurement member 51 may measure the distance in the vertical direction Z from the upper surface of an uppermost layer among the plurality of protection layers 140 and the plurality of dissolution layers 150 to the upper surface of the protrusion 125. According to one or more embodiments, the depth D of the groove 127 may be in a range of about 2 cm to about 3 cm. However, the depth D of the groove 127 is not limited thereto.

[0052]In one or more embodiments, the groove depth measurement member 51 may measure the depth D of the groove 127 formed in some area of the upper pad body 120. For example, the groove depth measurement member 51 may measure the depth D of the groove 127 at local portions of the upper pad body 120.

[0053]In one or more embodiments, the groove depth measurement member 51 may measure the depth D of the groove 127 formed in the entire area of the upper pad body 120. For example, the groove depth measurement member 51 may measure the depths D of all the grooves 127 formed in the upper pad body 120.

[0054]FIG. 4 is a schematic diagram of a groove depth measurement member according to one or more embodiments. In one or more embodiments, a groove depth measurement member 51-1 may measure the depth D of the groove 127 by using an optical module, as illustrated in FIG. 4. The groove depth measurement member 51-1 may measure a vertical direction Z distance from the groove depth measurement member 51-1 to the upper surface of the material provided in the groove 127, by emitting light IL1 into the groove 127 and using reflection light RL1 reflected by the upper surface of a material provided in the groove 127 (for example, from the upper surface of the protection layer 140). In addition, the groove depth measurement member 51-1 may measure the vertical direction Z distance from the groove depth measurement member 51-1 to the upper surface of the protrusion 125, by emitting light IL2 from the upper surface of the protrusion 125 and using reflection light RL2 reflected by the upper surface of the protrusion 125. Accordingly, the groove depth measurement member 51-1 may measure the depth D of the groove 127.

[0055]FIG. 5 is a diagram of a groove depth measurement member according to one or more embodiments. In one or more embodiments, a groove depth measurement member 51-2 may measure the depth D of the groove 127 by using a tip 510, as illustrated in FIG. 5. The tip 510 may contract or extend in the vertical direction Z. After the groove depth measurement member 51-2 is arranged to face the groove 127 in the vertical direction Z, the tip 510 may extend downward in the vertical direction Z toward the inside of the groove 127. In this case, the depth D of the groove 127 may be measured by using a length of the extended tip 510.

[0056]The groove protection layer removal member 55 may be configured to remove the protection layer 140. According to one or more embodiments, the groove protection layer removal member 55 may induce the protection layer 140 to be dissolved in an aqueous solution by applying heat to the protection layer 140.

[0057]In one or more embodiments, the groove protection layer removal member 55 may remove the protection layer 140 inside the groove 127 formed in a partial area of the upper pad body 120. For example, the groove protection layer removal member 55 may remove the protection layer 140 inside the groove 127 in local portions of the upper pad body 120.

[0058]In one or more embodiments, the groove protection layer removal member 55 may remove the protection layer 140 inside the groove 127 formed in the entire area of the upper pad body 120. For example, the groove protection layer removal member 55 may remove the protection layer 140 inside all grooves 127 formed in the upper pad body 120.

[0059]FIG. 6 is a diagram of a groove protection layer removal member according to one or more embodiments. In one or more embodiments, a groove protection layer removal member 55-1 may remove the protection layer 140 by emitting a laser beam LB onto the protection layer 140 in the groove 127 as illustrated in FIG. 6. For example, the groove protection layer removal member 55-1 may remove the protection layer 140 by directly using the laser beam LB, or perform a removal process on the protection layer 140 by increasing the temperature of the protection layer 140 by using the laser beam LB and dissolving the protection layer 140 by using an aqueous solution.

[0060]FIG. 7 is a diagram of a groove protection layer removal member according to one or more embodiments. In one or more embodiments, a groove protection layer removal member 55-2 may perform the removal process on the protection layer 140 by providing heat onto the protection layer 140 inside the groove 127, as illustrated in FIG. 7, increasing the temperature of the protection layer 140, and then dissolving the protection layer 140 by using an aqueous solution. For example, the groove protection layer removal member 55-2 may provide heat inside the protrusion 125 and the groove 127. In this case, the temperature of the protection layer 140 inside the groove 127 may increase to the predefined temperature T1 or higher due to the heat provided by the groove protection layer removal member 55-2. The protection layer 140, in which the temperature thereof has increased to the predefined temperature T1 or higher, may be removed as the solubility thereof increases and, in the end, the protection layer 140 may be dissolved by an aqueous solution.

[0061]The controller 57 may be configured to control the groove depth measurement member 51 and the groove protection layer removal member 55. For example, the controller 57 may be configured to control the groove protection layer removal member 55 based on the depth D of the groove 127 measured by using the groove depth measurement member 51. For example, when the depth D of the groove 127 measured from the groove depth measurement member 51 is a predefined depth D1 or less, the controller 57 may control the groove protection layer removal member 55 to remove the protection layer 140 provided inside the groove 127.

[0062]The controller 57 may be implemented as hardware, firmware, software, or a combination thereof. For example, the controller 57 may include a computing device, such as a workstation computer, a desktop computer, a laptop computer, and a tablet computer. The controller 57 may also include a simple controller, a microprocessor, a complex processor, such as a central processing unit (CPU), and a graphics processing unit (GPU), a processor including software, dedicated hardware, or firmware. The controller 57 may be implemented by, for example, application particular hardware, such as a digital signal processor (DSP), a field programmable gate array (FPGA), and an application specific integrated circuit (ASIC). The controller 57 may be implemented as instructions stored on a machine-readable medium that may be read and executed by one or more processors. In this case, the machine-readable medium may include an arbitrary mechanism for storing and/or transferring information in a form readable by a machine (for example, a computing device). For example, the machine-readable medium may include read-only memory (ROM), random access memory (RAM), a magnetic disk storage medium, an optical storage medium, a flash memory device, electrical, optical, acoustical, or other different forms of radio signals (for example, a carrier wave, infrared signals, digital signals, or the like), and other arbitrary signals.

[0063]The polishing head 10 may be above the polishing platen 20. The polishing head 10 may be spaced apart from the upper surface of the polishing platen 20 by a predefined interval in the vertical direction Z. The polishing head 10 may hold the polishing object. For example, the substrate W may be adhered on and/or contacting a bottom surface of the polishing head 10 facing the chemical mechanical polishing pad 100. The polishing head 10 may be configured to be moved horizontally, vertically, radially and/or rotated by a head drive shaft connected to an actuator. For example, the polishing head 10 may be configured to move linearly in a direction in parallel with the upper surface of the chemical mechanical polishing pad 100 (for example, in a radial direction, an X direction and/or a Y direction) or in a direction perpendicular to the upper surface of the chemical mechanical polishing pad 100) (for example, in a Z direction). In addition, the polishing head 10 may rotate clockwise or counterclockwise with respect to the Z axis. According to one or more embodiments, a rotation direction of the polishing head 10 may be the same as or opposite to that of the polishing platen 20. In addition, the polishing head 10 may apply an external force acting downward to the substrate W by using the head drive shaft. According to one or more embodiments, a retainer ring surrounding side surface of the substrate W may be arranged on the bottom surface of the polishing head 10. The retainer ring may support sides of the substrate W so that the substrate W does not separate from the polishing head 10.

[0064]The slurry supplier 40 may supply the polishing slurry to the upper surface of the chemical mechanical polishing pad 100. The slurry supplier 40 may include a polishing slurry source storing the polishing slurry therein, a polishing slurry arm, and a polishing slurry supply nozzle connected to one end of the polishing slurry arm. The polishing slurry provided by the polishing slurry source may be provided to the polishing slurry supply nozzle via a flow path, and the polishing slurry supply nozzle may spray the polishing slurry to the upper surface of the chemical mechanical polishing pad 100. The polishing slurry arm may be configured to rotate with a vertical direction (for example, Z direction) as a rotation axis, and may be configured to translate with respect to the rotation axis. The polishing slurry arm may be configured to translate while the polishing slurry is sprayed through the polishing slurry supply nozzle. The polishing slurry provided by the slurry supplier 40 may be accommodated in the groove 127 of the upper pad body 120.

[0065]The pad conditioner 30 may perform a pad conditioning process for finely cutting the surface of the chemical mechanical polishing pad 100. In other words, the pad conditioner 30 may maintain a constant surface roughness of the polishing surface of the chemical mechanical polishing pad 100 so that the polishing object is effectively polished during the polishing process. For example, the pad conditioner 30 may recover or maintain the surface roughness of the polishing surface of the chemical mechanical polishing pad 100 by polishing the polishing surface of the chemical mechanical polishing pad 100 in a state when the polishing of the polishing object is in progress or stopped. The pad conditioner 30 may be on the chemical mechanical polishing pad 100, and may be spaced apart from the upper surface of the chemical mechanical polishing pad 100 by a predefined interval in the vertical direction Z. According to one or more embodiments, the pad conditioner 30 may be on the upper portion near the edge of the chemical mechanical polishing pad 100. The pad conditioner 30 may include a conditioning disk and a conditioning arm. The conditioning disk may include a cutting tip for finely cutting the surface of the chemical mechanical polishing pad 100. The conditioning arm may be connected to the conditioning disk, and may move the conditioning disk. The conditioning arm may be configured to rotate with respect to a vertical direction (for example, Z direction) as a rotation axis, and may be configured to translate with respect to the rotation axis. As the conditioning disk moves along the surface of the chemical mechanical polishing pad 100 while contacting the chemical mechanical polishing pad 100, the surface of the chemical mechanical polishing pad 100 may be finely cut.

[0066]FIG. 8 is a diagram of a groove depth adjuster according to one or more embodiments. In one or more embodiments, the groove depth adjuster 50 of a substrate processing apparatus 2 may be provided integrally with the pad conditioner 30. For example, as illustrated in FIG. 8, the groove depth adjuster 50 may be connected to the conditioning arm of the pad conditioner 30 and driven together according to the driving of the conditioning arm.

[0067]As the polishing process proceeds, in the chemical mechanical polishing pad 100 provided to the substrate processing apparatuses 1 and 2, the portion of the protrusion 125 may be worn and the depth D of the groove 127 may decrease. When the depth D of the groove 127 is reduced, the volume of the aqueous solution provided during the polishing process filling the groove 127 may be reduced, and accordingly, the volume of the aqueous solution remaining on the surface of the protrusion 125 may be increased. When the aqueous solution is provided with a greater thickness on the surface of the protrusion 125, the friction between the protrusion 125 and the polishing object may be reduced, and thus, the homeostasis of the polishing process may be reduced.

[0068]In the substrate processing apparatuses 1 and 2 according to one or more embodiments, the dissolution layer 150 and the protection layer 140 may be provided inside the groove 127 of the upper pad body 120, the dissolution layer 150 may include a material soluble by an aqueous solution, and because the protection layer 140 is soluble by the aqueous solution at a predefined temperature or higher, when the depth D of the groove 127 of the upper pad body 120 is reduced by a predefined value or more, the depth D of the groove 127 may be maintained constant, by removing the protection layer 140 by using the groove depth adjuster 50 to control the dissolution layer 150 to be soluble by the aqueous solution. In other words, the depth D of the groove 127, that has been reduced during the polishing process, may increase again as the dissolution layer 150 is dissolved by the aqueous solution and removed. That is, the distance between an upper layer in the groove 127 and the upper surface of the protrusion 125 may remain relatively constant. As such, as the protrusion 125 is worn down by the processing performed by the apparatuses 1 and 2, the dissolution of the layers in the groove 127 may allow a “top surface” of the groove 127 to be lowered to match the wearing of the protrusion 125. This may prevent the reduction of friction between the protrusion and the polishing object, improving the polishing process.

[0069]In addition, in the substrate processing apparatuses 1 and 2 according to one or more embodiments, because the plurality of protection layers 140 and the plurality of dissolution layers 150 are alternately stacked, the depth D of the groove 127 of the upper pad body 120 may be adjusted finely.

[0070]In addition, because the dissolution layer 150 is dissolved by the aqueous solution provided during the polishing process, the dissolution layer 150 may be removed only by removing the protection layer 140, and in case of the protection layer 140, because the protection layer 140 is soluble by the aqueous solution at a temperature higher than that of the protection layer 140, the depth D of the groove 127 may be easily adjusted by simply adjusting the temperature of the protection layer 140.

[0071]FIG. 9 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments. Description of aspects the same as or similar to those described above may be omitted.

[0072]Referring to FIG. 9, the chemical mechanical polishing pad 101 may include the lower pad body 110 and the upper pad body 120. The lower pad body 110 may function as a support layer supporting the upper pad body 120, and the upper pad body 120 may be arranged on the upper surface of the lower pad body 110. The upper pad body 120 may include the protrusion 125 protruding upward in the vertical direction Z from the upper surface of the upper pad body 120. The upper pad body 120 may include the plurality of protrusions 125. The plurality of protrusions 125 may be spaced apart from each other in the horizontal direction (X direction or Y direction) or in a radial direction. A space between each of the plurality of protrusions 125 may be defined as the groove 127. The protection layer 140 and the dissolution layer 150 may be provided in the groove 127.

[0073]According to one or more embodiments, each of the protection layer 140 and the dissolution layer 150 may be provided as one layer. For example, the dissolution layer 150 may be provided on the upper surface of the upper pad body 120 inside the groove 127, and the protection layer 140 may be provided on the dissolution layer 150. The protection layer 140 may cover the dissolution layer 150. The dissolution layer 150 may be sealed from the outside by the protection layer 140. As shown in FIG. 9, the thickness of the dissolution layer 150 may be greater than the thickness of the protection layer 140 in the vertical direction.

[0074]The chemical mechanical polishing pad 101 according to one or more embodiments may include one protection layer 140 and one dissolution layer 150. Accordingly, the manufacturing cost of the chemical mechanical polishing pad 101 may be reduced, and the depth D of the groove 127 may be increased rapidly.

[0075]FIG. 10 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments. FIG. 11 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments. Description of aspects the same as or similar to those described above may be omitted.

[0076]Referring to FIGS. 10 and 11, the chemical mechanical polishing pads 102 and 103 may include protection layers 142 and 143, and dissolution layers 152 and 153, respectively. Vertical levels of lower surfaces of the protection layers 142 and 143 may increase from centers thereof toward side surfaces thereof. In other words, the lower surfaces of the protection layers 142 and 143 may have shapes in which the vertical levels thereof increase from the centers thereof in the horizontal direction (X direction or Y direction) or in a radial direction. In addition, the vertical levels of the upper surfaces of the dissolution layers 152 and 153 under the protection layers 142 and 143 may increase from the centers of the dissolution layers 152 and 153 toward side surfaces of the dissolution layers 152 and 153, respectively.

[0077]According to one or more embodiments, the protection layer 142 of the chemical mechanical polishing pad 102 may, as illustrated in FIG. 10, have a shape in which the vertical level of the lower surface of the protection layer 142 increases from the center of the protection layer 142 toward the side surfaces of the protection layer 142 at the same slope. In other words, the protection layer 142 may, in an X-Z plan view, have a shape in which the vertical level of the lower surface of the protection layer 142 increases from the center thereof toward the side surfaces thereof in a line form. In addition, the vertical level of the upper surface of the dissolution layer 152 under the protection layer 142 may increase from the center of the dissolution layer 152 toward the side surface of the dissolution layer 152 at substantially the same slope. In other words, the dissolution layer 152 may, in the X-Z plan view, have a shape in which the vertical level of the upper surface of the dissolution layer 152 increases from the center thereof toward the side surfaces thereof in a line form. The shapes of the lower surface of the protection layer 142 and the upper surface of the dissolution layer 152 may also be understood as V shapes.

[0078]According to one or more embodiments, the protection layer 143 of the chemical mechanical polishing pad 103 may, as illustrated in FIG. 11, have a shape in which the vertical level of the lower surface of the protection layer 143 increases from the center thereof toward the side surfaces thereof at a varying slope. For example, the protection layer 143 may have a downwardly convex shape in the X-Z plan view. In addition, the vertical level of the upper surface of the dissolution layer 153 under the protection layer 143 may increase from the center of the dissolution layer 153 toward the side surface of the dissolution layer 153 at a varying slope. In other words, the upper surface of each of the plurality of dissolution layers 153 may, in the X-Z plan view, have a downwardly convex shape. The lower surface of the protection layer 143 and the upper surface of the dissolution layer 153 may also be understood as a U-shape.

[0079]In the chemical mechanical polishing pads 102 and 103 according to one or more embodiments, because the vertical level of each of the lower surfaces of the protection layers 142 and 143 and the upper surfaces of the dissolution layers 152 and 153 increases from the center toward the side surfaces, areas where the protection layers 142 and 143 and the dissolution layers 152 and 153 contact the aqueous solution may increase, respectively. Accordingly, the time during which the protection layers 142 and 143 and the dissolution layers 152 and 153 are removed by the aqueous solution, may be reduced, and the process efficiency may increase.

[0080]FIG. 12 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments. FIG. 13 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments. Description of aspects the same as or similar to those described above may be omitted.

[0081]Referring to FIGS. 12 and 13, the chemical mechanical polishing pads 104 and 105 may include a plurality of protection layers 142 and 143, and a plurality of dissolution layers 152 and 153, respectively. The plurality of protection layers 142 and 143 and the plurality of dissolution layers 152 and 153 may be alternately stacked in the vertical direction Z, respectively. The vertical levels of the lower surfaces of the plurality of protection layers 142 and 143 may increase from the centers thereof toward the side surfaces thereof, and the vertical levels of the upper surfaces of the plurality of dissolution layers 152 and 153 may increase from the centers thereof toward the side surfaces thereof.

[0082]According to one or more embodiments, the protection layers 142 of the chemical mechanical polishing pad 104 may, as illustrated in FIG. 12, have a shape in which the vertical level of the lower surface of each of the protection layers 142 increases from the center thereof toward the side surfaces thereof at substantially the same slope. In other words, each of the protection layers 142 may, in the X-Z plan view, have a shape in which the vertical level of the lower surface of each of the protection layers 142 increases from the center thereof toward the side surfaces thereof in a line form. In addition, the vertical level of the upper surface of the dissolution layer 152 under each of the protection layers 142 may increase from the center of the dissolution layer 152 toward the side surface of the dissolution layer 152 at substantially the same slope. In other words, the dissolution layer 152 may, in the X-Z plan view, have a shape in which the vertical level of the upper surface of the dissolution layer 152 increases from the center thereof toward the side surfaces thereof in a line form. The shapes of the lower surfaces of the protection layers 142 and the upper surfaces of the dissolution layers 152 may also be understood as V shapes.

[0083]According to one or more embodiments, the protection layers 143 of the chemical mechanical polishing pad 105 may, as illustrated in FIG. 13, have a shape in which the vertical level of the lower surface of each of the protection layers 143 increases from the center of the protection layer 143 toward the side surfaces of the protection layer 143 at a varying slope. For example, the protection layers 143 may, have a downwardly convex shape, in the X-Z plan view. In addition, the vertical level of the upper surface of the dissolution layer 153 under each of the protection layers 143 may increase with a slope that changes from the center thereof toward the side surface thereof. In other words, the upper surface of each of the dissolution layers 153 may, in the X-Z plan view, have a downwardly convex shape. The lower surfaces of the protection layers 143 and the upper surfaces of the dissolution layers 153 may also be understood as a U-shape.

[0084]In the chemical mechanical polishing pads 104 and 105 according to one or more embodiments, because the vertical level of each of the lower surfaces of the protection layers 142 and 143 and the upper surfaces of the dissolution layers 152 and 153 increases from the center toward the side surfaces, the time during which the protection layer 142 and 143 and the dissolution layer 152 and 153 are removed by the aqueous solution may be reduced, and thus, the process efficiency may increase, respectively. In addition, because the chemical mechanical polishing pads 104 and 105 according to the technical aspect of the inventive concept include the plurality of protection layers 142 and 143 and the plurality of dissolution layers 152 and 153, respectively, the depth D of the groove 127 may be finely controlled.

[0085]FIG. 14 is a cross-sectional view of a partial area of a chemical mechanical polishing pad, according to one or more embodiments. Description of aspects the same as or similar to those described above may be omitted.

[0086]Referring to FIG. 14, the chemical mechanical polishing pad 106 may include the lower pad body 110 and the upper pad body 120. The lower pad body 110 may function as a support layer supporting the upper pad body 120, and the upper pad body 120 may be arranged on the upper surface of the lower pad body 110. The upper pad body 120 may include the protrusion 125 protruding upward in the vertical direction Z from the upper surface of the upper pad body 120. The upper pad body 120 may include the plurality of protrusions 125. The plurality of protrusions 125 may be apart from each other in a horizontal direction (X direction or Y direction) or in a radial direction. A space between each of the plurality of protrusions 125 may be defined as the groove 127. A protection layer 146 and a dissolution layer 156 may be provided in the groove 127.

[0087]The protection layer 146 may include a first protection layer 146-1 farthest from the upper surface of the upper pad body 120 in the vertical direction Z, and a second protection layer 146-2 having a shape extending from the bottom portion of the first protection layer 146-1 in the vertical direction Z and the horizontal direction (X direction or Y direction) or in a radial direction. That is, layer 146-1 may be further from an upper surface of the lower pad body 110 than an uppermost portion of layer 146-2. The first protection layer 146-1 may have a shape extending in the horizontal direction (X direction or Y direction) or in a radial direction, and the second protection layer 146-2 may, in the X-Z plan view, include sidewalls extending in the vertical direction Z and lower walls extending in the horizontal direction (X direction or Y direction) or in a radial direction. In one or more embodiments, the second protection layer 146-2 may also have a shape extending only in the vertical direction Z. That is, layer 146-2 may include a plurality of U-shaped sublayers embedded in the dissolution layer 150, with an innermost sublayer being a single protrusion extending vertically downward.

[0088]Each of the embodiments provided in the above description is not excluded from being associated with one or more features of another example or another embodiment also provided herein or not provided herein but consistent with the disclosure.

[0089]While the disclosure has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims.