POLISHING PROCESS APPARATUS

CROSS-REFERENCE TO RELATED APPLICATION(S)

[0001]This application claims benefit of priority to Korean Patent Application No. 10-2024-0018690 filed on Feb. 7, 2024 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

BACKGROUND

[0002]Example embodiments relate to a polishing process apparatus.

[0003]Among semiconductor processes, a polishing process may include forming a desired thickness by entirely or partially removing a target layer determined by a wafer or a layer formed on the wafer. When a polishing process is performed on a target layer including a plurality of films, the target layer may not have a desired thickness as the plurality of films may each have different polishing speeds. Accordingly, erosion or dishing may occur. Thus, to reduce a difference in polishing speeds between the plurality of films and to form the target layer to have a desired thickness, a method of maintaining temperature of a polishing pad to be within a predetermined range may be desirable.

SUMMARY

[0004]An example embodiment of the present disclosure provides a polishing process apparatus which may maintain temperature of a polishing pad within a predetermined range by controlling temperature of a platen and separating solutions discharged to an upper surface of the polishing pad such that the solutions are not mixed with each other.

[0005]According to an embodiment, a polishing process apparatus includes a carrier configured to hold a polishing target; a platen disposed below the carrier; a polishing pad disposed below the platen; a nozzle system including at least one nozzle configured to discharge temperature-control fluid to an upper surface of the polishing pad, an additional nozzle configured to discharge slurry solution to an upper surface of the polishing pad, and a barrier configured to separate temperature-control fluid discharged from the at least one nozzle from slurry solution discharged from the additional nozzle on an upper surface of the polishing pad; a temperature sensor configured to measure a temperature of the polishing pad; and a controller configured to control the platen, the at least one nozzle, the additional nozzle, the barrier, and the temperature sensor. The controller is configured to maintain a temperature of the platen to be within a platen target temperature range by controlling the platen, and to maintain a temperature of the polishing pad to be within a process target temperature range by controlling at least one of a supply amount and a temperature of the temperature-control fluid discharged from the at least one nozzle.

[0006]According to an embodiment, a polishing process apparatus includes a carrier configured to hold a polishing target; a platen disposed below the carrier; a polishing pad disposed below the platen; a nozzle system including a first nozzle configured to supply fluid to an upper surface of the polishing pad, a second nozzle configured to supply a slurry solution to the upper surface of the polishing pad, and a fluid barrier; a temperature sensor configured to measure a temperature of the polishing pad; and a controller configured to control the platen, the first nozzle, the second nozzle, the fluid barrier, and the temperature sensor. The fluid barrier is disposed between the first nozzle and the second nozzle in a direction parallel to an upper surface of the polishing pad, and is configured to separate fluid discharged from the first nozzle from slurry solution discharged from the second nozzle on an upper surface of the polishing pad, and the controller is configured to maintain a temperature of the polishing pad to be within a process target temperature range by controlling at least one of a supply amount and a temperature of fluid discharged from the first nozzle while a polishing process is performed on the polishing target.

[0007]According to an embodiment, a polishing process apparatus includes a carrier configured to hold a polishing target; a platen disposed below the carrier; a polishing pad disposed below the platen; a nozzle system including at least one nozzle configured to supply fluid to an upper surface of the polishing pad, an additional nozzle configured to supply a slurry solution to an upper surface of the polishing pad, and a barrier configured to separate fluid discharged from the at least one nozzle from slurry solution discharged from the additional nozzle on an upper surface of the polishing pad; a temperature sensor configured to measure a temperature of the polishing pad; and a controller configured to control the platen, the at least one nozzle, the additional nozzle, the barrier, and the temperature sensor. The controller is configured to maintain a temperature of the platen to be within a platen target temperature range by controlling the platen, to trigger a polishing process for the polishing target while a temperature of the polishing pad is maintained to be within a process basic temperature range, and while the polishing process is performed, to maintain a temperature of the polishing pad to be within a process target temperature range by controlling at least one of a temperature and a supply amount of fluid discharged from the at least one nozzle.

BRIEF DESCRIPTION OF DRAWINGS

[0008]The and other aspects, features, and advantages in the example embodiment will be more clearly understood from the following detailed description, taken in combination with the accompanying drawings, in which:

[0009]FIGS. 1 and 2 are diagrams illustrating a polishing process apparatus according to an example embodiment of the present disclosure;

[0010]FIG. 3 is a block diagram illustrating a polishing process apparatus according to an example embodiment of the present disclosure;

[0011]FIGS. 4 to 6 are diagrams illustrating a polishing process apparatus according to example embodiments of the present disclosure;

[0012]FIG. 7 is a flowchart illustrating operations of a polishing process apparatus according to an example embodiment of the present disclosure;

[0013]FIGS. 8 and 9 are flowcharts illustrating controlling temperature of a polishing pad of a polishing process apparatus according to an example embodiment of the present disclosure;

[0014]FIG. 10 is a diagram illustrating changes in temperature of a polishing pad according to an example embodiment of the present disclosure;

[0015]FIG. 11 is a diagram illustrating changes in temperature of a polishing pad according to example embodiments of the present disclosure;

[0016]FIGS. 12 and 13 are diagrams illustrating changes in temperature of a polishing pad according to example embodiments of the present disclosure;

[0017]FIGS. 14 to 17 are diagrams illustrating a polishing process performed in a polishing process apparatus according to an example embodiment of the present disclosure;

[0018]FIG. 18 is a diagram illustrating a structure of a semiconductor apparatus according to an example embodiment of the present disclosure; and

[0019]FIGS. 19 to 23 are cross-sectional diagrams taken along line I-I′ in FIG. 18, illustrating a polishing process performed in a polishing process apparatus according to an example embodiment of the present disclosure.

DETAILED DESCRIPTION

[0020]Hereinafter, embodiments in the example embodiment will be described as follows with reference to the accompanying drawings.

[0021]Ordinal numbers such as “first,” “second,” “third,” etc. may be used simply as labels of certain elements, steps, etc., to distinguish such elements, steps, etc. from one another. Terms that are not described using “first,” “second,” etc., in the specification, may still be referred to as “first” or “second” in a claim. In addition, a term that is referenced with a particular ordinal number (e.g., “first” in a particular claim) may be described elsewhere with a different ordinal number (e.g., “second” in the specification or another claim).

[0022]It will be understood that when an element is referred to as being “connected” or “coupled” to or “on” another element, it can be directly connected or coupled to or on the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, or as “contacting” or “in contact with” another element (or using any form of the word “contact”), there are no intervening elements present at the point of contact.

[0023]FIGS. 1 and 2 are diagrams illustrating a polishing process apparatus according to an example embodiment.

[0024]Referring to FIGS. 1 and 2, a polishing process apparatus 1 according to an example embodiment may include a carrier 10, which supports a polishing target such as a wafer W, a platen 20 disposed below the carrier 10, a polishing pad 30 attached to an upper surface of the platen 20, nozzle portions 40, 50, and 60 supplying a specific material to the polishing pad 30 while a polishing process is performed, and a pad conditioner 70 for conditioning a polishing surface, such as an upper surface of the polishing pad 30.

[0025]Also, the polishing process apparatus 1, also described as a polishing apparatus, may further include a temperature sensor 80 and a controller 90. The temperature sensor 80 may measure a temperature of the pad while the polishing process is performed. The controller may control the carrier 10, the platen 20, the polishing pad 30, the nozzle portion 40, 50, and 60, the pad conditioner 70, and the temperature sensor 80.

[0026]A deposition process may include depositing a specific material on a polishing target such as the wafer W and as a result, forming a thin film. A plurality of thin films may be formed. The thin films may not have the same thickness at the entirety of positions on the wafer W, and there may be a difference in thicknesses of the thin films depending on positions. Accordingly, the polishing process may be performed on the wafer W to control the thicknesses of the thin films to be constant.

[0027]A plurality of semiconductor dies may be disposed in a grid form on the wafer W, and each of the plurality of semiconductor dies may include one or more layers. For example, among one or more layers, an uppermost layer may be a target layer for the polishing process. The wafer W may be mounted on the carrier 10 such that the target layer may be exposed externally of the polishing head 12. For example, the carrier 10 may be configured to hold the wafer W using a suction force such as a vacuum force, or by using another attractive force.

[0028]The polishing head 12 may be fixed to the carrier driving shaft 14 and may rotate by the carrier driving shaft 14. The polishing head 12 may include a retainer ring, and the wafer W may be fixed below the membrane in the polishing head 12. The polishing head 12 may press the target layer to the polishing pad 30.

[0029]The platen 20 may have a disk shape on which the polishing pad 30 is seated and may rotate. The platen 20 may rotate by a platen driving shaft 22 having a driving axis. In the example embodiment illustrated in FIG. 1, the platen 20 and the polishing head 12 may rotate in the same direction, but the embodiments are not limited thereto.

[0030]The polishing pad 30 may include polishing particles such that the target layer of the wafer W may be polished and removed. For example, the polishing pad 30 may include an elastic material such as polyurethane and may have a rough surface including a plurality of polishing protrusions.

[0031]When the polishing pad 30 is worn, the pad conditioner 70 may regenerate surface roughness to a predetermined level by grinding the surface of the polishing pad 30. Pressure may be applied while the conditioner disk 72 of the pad conditioner 70 is in contact with the surface of the polishing pad 30. For example, when the polishing pad 30 is used for more than a predetermined period of time, the polishing particles present in the polishing pad 30 may be damaged due to friction with the target layer of the wafer W. In this case, lifespan of the polishing pad 30 may be improved by regenerating the polishing pad 30 using the pad conditioner 70.

[0032]The temperature sensor 80 may measure a temperature of the polishing pad 30. For example, the temperature sensor 80 may be configured as a single sensor and may be disposed at a predetermined distance along the Z-axis in FIGS. 1 and 2 from the upper surface of the polishing pad 30. A temperature of the polishing pad 30 may correspond to a temperature of one point of the polishing pad 30 measured by a single sensor. The temperature sensor 80 may be, for example, an infrared temperature sensor capable of measuring temperature at a surface.

[0033]In another example, the temperature sensor 80 may include a plurality of sensors. The plurality of sensors may be disposed at the same distance along the Z-axis in FIGS. 1 and 2 from the upper surface of the polishing pad 30, or at least one temperature sensor may be disposed at a different distance. A temperature of the polishing pad 30 may correspond to an average of temperatures of multiple points of the polishing pad 30 measured by the plurality of sensors, but an example embodiment thereof is not limited thereto. Alternatively, a single temperature sensor 80 may be moveable or the polishing pad 30 may be moved during temperature sensing so that the temperatures at more than one point on the polishing pad 30 may be measured.

[0034]The nozzle portions 40, 50, and 60, also described collectively as a nozzle system 40, 50, and 60, or a nozzle group 40, 50, and 60, may include a first nozzle 40, a second nozzle 50, and a nozzle barrier 60. The first nozzle 40 may discharge fluid to the upper surface of the polishing pad 30, and the second nozzle 50 may discharge slurry solution to the upper surface of the polishing pad 30. The second nozzle 50 may be generally described as an additional nozzle.

[0035]A temperature of the polishing pad 30 may be adjusted through the first nozzle 40. The first nozzle 40 may supply fluid for controlling temperature to the upper surface of the polishing pad 30. For example, the first nozzle 40 may supply deionized water to the upper surface of the polishing pad 30.

[0036]Slurry solution sprayed from the second nozzle 50 may include chemicals and polishing materials, and in an example embodiment, slurry solution may include fine polishing particles such as colloidal silica. The target layer of the wafer W may be chemically flattened by slurry solution sprayed to the upper surface of the polishing pad 30.

[0037]When a polishing process is performed on a target layer including a plurality of films, erosion or dishing may occur on the target layer. The plurality of films may include a polishing target film and a polishing stop film, and there may be a difference in polishing speeds between the polishing target film and the polishing stop film. Erosion may occur when the polishing stop film is polished more than an allowed level while the polishing target film is polished and a relatively large area is recessed. Dishing may refer to a recess occurring in a single pattern due to excessive polishing of the polishing target film while the polishing pad is blocked by the polishing stop film.

[0038]Accordingly, when the polishing process is performed, it may be important to maintain a temperature of the polishing pad 30 at a process target temperature or to be within a process target temperature range. By maintaining the temperature of the polishing pad 30 at the process target temperature or to be within the process target temperature range, the target layer of the wafer W may be polished at a pre-designed removal rate, and accordingly, a difference in polishing speeds between films may be reduced. As a result, erosion or dishing may be prevented on the target layer.

[0039]However, when the temperature of the polishing pad 30 is controlled using fluid discharged from the first nozzle 40, slurry solution discharged from the second nozzle 50 may be diluted in fluid such that polishing performance may degrade. By allowing gas mixed in deionized water to be discharged from the first nozzle 40, the dilution of slurry solution may be reduced, and the gas may include nitrogen, oxygen, and carbon dioxide. However, the amount of discharged deionized water may be reduced such that the efficiency of temperature control of the polishing pad 30 may be reduced.

[0040]The polishing process apparatus 1 in an example embodiment may include the nozzle barrier 60. For example, the nozzle barrier 60 may be disposed between the first nozzle 40 and the second nozzle 50 in a direction parallel to the upper surface of the polishing pad 30. For example, when viewing the nozzle barrier 60 in a two-dimensional polar coordinate system coinciding with the upper surface of the polishing pad 30, the direction in which the nozzle barrier 60 extends may be a particular angular direction.

[0041]The nozzle barrier 60, which may be a fluid barrier, fluid barrier block, or fluid wiper, may separate fluid discharged from the first nozzle 40 from slurry solution discharged from the second nozzle 50 on the upper surface of the polishing pad 30. The nozzle barrier 60 may prevent fluid from mixing with slurry solution, such that slurry solution may be prevented from being diluted. The nozzle barrier 60 may have an elongated shape and may include a material or structure, which may contact the polishing pad along its length or may have only a very small gap between a bottom surface thereof and the polishing pad when lowered (e.g., a gap sufficient to allow fluids to be removed from the surface of the polishing pad without exerting pressure on the polishing particles formed on the surface of the polishing pad). Accordingly, the controller 90 may control a large amount of deionized water without gas mixed therein to be discharged from the first nozzle 40, thereby improving the efficiency of temperature control of the polishing pad 30. Also, since slurry solution is not diluted while the polishing process is performed, polishing performance may not be degraded.

[0042]Also, the polishing process apparatus 1 in the example embodiment may control the temperature of the platen 20. By controlling the temperature of the platen 20, the temperature of the polishing pad 30 in which the polishing process is triggered may be controlled, which may be performed using the conduction of heat of the platen 20 to the polishing pad 30. Accordingly, by controlling the temperature of the platen 20, the temperature conditions required in an initial stage of the polishing process may be established, such that performance of the polishing process may be improved.

[0043]According to an example embodiment, to trigger the polishing process, the temperature of the polishing pad 30 may be controlled by controlling the temperature of the platen 20. Also, the solution discharged by the first nozzle 40 may be separated from slurry solution on the polishing pad 30 by the nozzle barrier 60, such that the temperature of the polishing pad 30 may be efficiently controlled while the polishing process is performed. Accordingly, the polishing process apparatus 1 may improve the efficiency and speed of the polishing process.

[0044]FIG. 3 is a block diagram illustrating a polishing process apparatus according to an example embodiment.

[0045]Referring to FIG. 3, the polishing process apparatus 100 according to the example embodiment may include a carrier 110, a platen 120, a polishing pad 130, a nozzle portion 140, 150, and 160, a pad conditioner 170, a temperature sensor 180, and a controller 190. The nozzle portions 140, 150, and 160 may include a first nozzle 140, a second nozzle 150, and a nozzle barrier 160. The specific example embodiments such as the carrier 110, the pad conditioner 170, and the temperature sensor 180 may be similar to the example embodiment described with reference to FIGS. 1 and 2.

[0046]When the polishing target is fixed to the carrier 110, the controller 190 may perform a polishing process of removing at least a portion of the target layer included in the polishing target by rotating each of the carrier 110 and the platen 120. Before and while the polishing process is performed, the controller 190 may control the temperature of the polishing pad 130 using the platen 120 and the nozzle portions 140, 150, and 160.

[0047]The temperature conditions of the polishing pad 130 under which the polishing process may be performed efficiently may be different for each polishing process. For example, the temperature conditions of the polishing pad 130 may be determined by characteristics of the target layer, the rotation speed of the platen 120, and characteristics of slurry solution. In an example embodiment, the temperature condition of the polishing pad 130 may include a process basic temperature range and a process target temperature range.

[0048]The process basic temperature may be a specific temperature, and the process basic temperature range may be a specific range from the process basic temperature (e.g., a specific range above and below the process basic temperature). When the temperature of the polishing pad 130 is maintained in the process basic temperature range, the polishing process may be triggered. For example, until the temperature of the polishing pad 130 reaches a certain temperature, the polishing process may be prevented from starting, and then after the temperature reaches the process basic temperature range and remains there, the polishing process may begin as the result of being triggered, for example, by the controller 80. The process target temperature may be a specific temperature, and the process target temperature range may be a specific range from the process target temperature (e.g., a specific range above and below the process target temperature). The process target temperature range may be the range in which the temperature of the polishing pad 130 may need to be maintained while the polishing process is performed. The process basic temperature may be different from the process target temperature, and for example, the process target temperature may be higher than the process basic temperature. For example, during polishing, a temperature of the polishing pad 130 may rise a certain amount above the process basic temperature range, and a certain temperature rise may be permissible and may constitute the process target temperature. However, example embodiments are not limited thereto.

[0049]In an example embodiment, the controller 190 may control the temperature of the platen 120 and may trigger the polishing process. Specifically, the controller 190 may maintain the temperature of the platen 120 to be within the platen target temperature range. By maintaining the temperature of the platen 120 within the platen target temperature range, the temperature of the polishing pad 130 may reach the process basic temperature range. Thereafter, while the temperature of the polishing pad 130 is maintained in the process basic temperature range, the controller 190 may trigger the polishing process for the polishing target.

[0050]The platen target temperature range may correspond to the temperature range of the platen 120 to maintain the temperature of the polishing pad 130 in the process basic temperature range. The platen target temperature may be a specific temperature, and the platen target temperature range may correspond to a specific range above and below the platen target temperature.

[0051]The platen target temperature may be calculated from the process basic temperature. For example, when a higher process basic temperature is advantageous for the polishing process, the platen target temperature may be higher than the process basic temperature. As another example, when a lower process basic temperature is advantageous for the polishing process, the platen target temperature may be lower than the process basic temperature. However, example embodiments are not limited thereto.

[0052]After the polishing process is triggered and while it is performed, the controller 190 in example embodiments may maintain the temperature of the polishing pad 130 within the process target temperature range by controlling the first nozzle. Specifically, the controller 190 may control at least one of the supply amount and the temperature of fluid discharged from the first nozzle 140. For example, the controller 90 can include one or more of the following components: at least one central processing unit (CPU) configured to execute computer program instructions to perform various processes and methods, random access memory (RAM) and read only memory (ROM) configured to access and store data and information and computer program instructions, input/output (I/O) devices configured to provide input and/or output (e.g., keyboard, mouse, display, speakers, printers, modems, network cards, etc.), and storage media or other suitable type of memory (e.g., such as, for example, RAM, ROM, programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), magnetic disks, optical disks, floppy disks, hard disks, removable cartridges, flash drives, any type of tangible and non-transitory storage medium) where data and/or instructions can be stored. In addition, the controller 90 can include antennas, network interfaces that provide wireless and/or wire line digital and/or analog interface to one or more networks over one or more network connections (not shown), a power source that provides an appropriate alternating current (AC) or direct current (DC) to power one or more components of the controller 90, and a bus that allows communication among the various disclosed components of the controller 90. The controller 90 may control one or more heaters, flow valves, actuators, and rotation motors, as well as one or more rotating columns and swivel arms that control the vertical and radial movement of the carrier 10, in order to control the polishing process as well as the temperature of the polishing pad 30 and/or platen 20 during the polishing process. The controller 90 may include computer program code stored on a non-transitory computer-readable medium and configured to cause the controller to monitor the temperature measured by the temperature sensor 80 and to control the above-mentioned and other physical variables in order to maintain a certain temperature of the polishing pad 30 and/or platen 20.

[0053]When the temperature of the polishing pad 130 is higher than the process target temperature, the controller 190 may increase the supply amount of fluid for cooling the polishing pad 130 or may supply fluid having a temperature lower than before, thereby lowering the temperature of the polishing pad 130. When the temperature of the polishing pad 130 is lower than the process target temperature, the controller 190 may increase the supply amount of fluid for heating the polishing pad 130 or may supply fluid having a temperature higher than before, thereby increasing the temperature of the polishing pad 130.

[0054]The polishing process apparatus 100 in example embodiments may include a nozzle barrier 160. The nozzle barrier 160 may separate fluid discharged from the first nozzle 140 from slurry solution discharged from the second nozzle 150 on the upper surface of the polishing pad 130. Accordingly, the temperature of the polishing pad 130 may be swiftly controlled by increasing the amount of fluid discharged from the first nozzle 140. Also, since fluid flows into slurry solution discharged from the second nozzle 150 and the slurry solution is not diluted, performance of the polishing process due to slurry solution may not be deteriorated. Specific example embodiments of the nozzle barrier 160 may be similar to the example embodiments described with reference to FIGS. 1 and 2.

[0055]According to an example embodiment, by controlling the temperature of the platen 120 and including the nozzle barrier 160, the temperature of the polishing pad 130 may be appropriately controlled. Accordingly, the efficiency and speed of the polishing process of the polishing process apparatus 100 may be improved.

[0056]FIGS. 4 to 6 are diagrams illustrating a polishing process apparatus according to example embodiments.

[0057]Referring to FIGS. 4 to 6, polishing process apparatuses 200 and 300 according to example embodiments may include carriers 210 and 310 supporting a polishing target such as a wafer W, platen 220 and 320 including platen driving shaft 222 and 322, the polishing pads 230 and 330, first nozzle 240 or first nozzle group 340, second nozzles 250 and 350, and nozzle barriers 260 and 360. Also, although not illustrated in FIGS. 4 to 6, the polishing process apparatus 200 and 300 may further include a pad conditioner, a temperature sensor, and a controller. Specific example embodiments of the polishing process apparatus 200 and 300 according to example embodiments may be similar to the example embodiment described with reference to FIGS. 1 to 3.

[0058]First, referring to FIG. 4, the platen 220 may rotate by the platen driving shaft 222 having a driving axis. Since the polishing pad 230 is attached to an upper surface of platen 220, the polishing pad 230 may also rotate by the rotating platen 220. The first nozzle 240 may discharge fluid to the upper surface of the polishing pad 230, and the second nozzle 250 may discharge slurry solution to the upper surface of the polishing pad 230.

[0059]When no nozzle barrier 260 is provided, fluid discharged from the first nozzle 240 and slurry solution discharged from the second nozzle 250 may be mixed with each other. Accordingly, slurry solution may be diluted by fluid, which may lower performance of the polishing process. The polishing process apparatus 200 in one example embodiment may include the nozzle barrier 260 configured to separate fluid discharged from the first nozzle 240 from slurry solution discharged from the second nozzle 250 on the upper surface of the polishing pad 230.

[0060]For example, the nozzle barrier 260 may be disposed between the first nozzle 240 and the second nozzle 250 in a direction parallel to the upper surface of the polishing pad 230. For example, when viewing the nozzle barrier 260 in a two-dimensional polar coordinate system coinciding with the upper surface of the polishing pad 230, the direction in which the nozzle barrier 260 extends may be a particular angular direction. Since fluid is discharged externally of the polishing pad 230 without being mixed with slurry solution by the nozzle barrier 260, the issue of slurry solution being diluted while the polishing process is performed may be addressed.

[0061]According to an example embodiment, the nozzle barrier 260 may extend in a radial direction away from a center of the polishing pad 230. A length of the nozzle barrier 260 may be longer than a radius of the polishing pad 230. Therefore, in some embodiments, a portion of the nozzle barrier 260 may not be in contact with an upper surface of the polishing pad 230.

[0062]Also, while the polishing process is performed, the controller may maintain the temperature of the polishing pad 230 to be within the process target temperature range by controlling at least one of the supply amount and the temperature of fluid discharged from the first nozzle 240.

[0063]When the temperature of the polishing pad 230 is higher than the process target temperature, the controller may increase the supply amount of fluid for cooling the polishing pad 230 or may supply fluid having a temperature lower than before, thereby lowering the temperature of the polishing pad 230. When the temperature of the polishing pad 230 is lower than the process target temperature, the controller may increase the supply amount of fluid for heating the polishing pad 230 or may supply fluid having a temperature higher than before, thereby increasing the temperature of the polishing pad 230.

[0064]FIG. 5 specifically illustrates an example of the platen 220, the polishing pad 230, and the nozzle barrier 260 of the polishing process apparatus 200 of the example embodiment illustrated in FIG. 4.

[0065]In an example embodiment, the platen 220 may include a temperature control system such as a platen cooling and a heating portion 224. The platen 220 may be cooled or heated by the platen cooling/heating portion 224, which may be a cooling/heating layer. The controller may maintain the temperature of the platen 220 within the platen target temperature range by controlling the platen cooling/heating portion 224. By maintaining the temperature of the platen 220 to be within the platen target temperature range, the temperature of the polishing pad 230 may be maintained to be within the process basic temperature range, and so the polishing process may be permitted to begin.

[0066]As an example, the platen cooling/heating portion 224 may include a plurality of fluid circulation channels, which may be temperature control piping configured to transfer temperature-control fluid. Circulation fluid may correspond to deionized water, but an example embodiment thereof is not limited thereto. The controller may control the temperature of the platen 220 by controlling at least one of the temperature and circulation amount of the circulation fluid circulating the plurality of fluid circulation channels. In another example, the platen cooling/heating portion 224, may include a plurality of thermoelectric elements. The controller may control the temperature of the platen by controlling a voltage applied to each of the plurality of thermoelectric elements.

[0067]Also, according to an example embodiment, the controller included in the polishing process apparatus 200 may separate fluid discharged from the first nozzle from slurry solution discharged from the second nozzle by controlling a level at which the nozzle barrier 260 is disposed (e.g., the vertical level in the Z-axis direction). By controlling the level at which the nozzle barrier 260 is disposed, the level of pressure applied by the nozzle barrier 260 to the upper surface of the polishing pad 230 in the Z-axis direction in FIGS. 3 and 4 may be controlled. The level of the pressure may vary depending on a rotation speed of the platen 220, physical properties of the polishing pad 230, the temperature of the polishing pad 230, or the composition of slurry solution.

[0068]As an example, the nozzle barrier 260 may include a support stand 262 including at least one spring 264. One end of the spring 264 may be connected to one surface at which the support stand 262 is in contact with the nozzle barrier 260. The controller may control the level at which the nozzle barrier 260 is disposed by adjusting the pressure applied to the spring 264. However, example embodiments thereof are not limited thereto. A surface of the nozzle barrier 260 opposite the surface that connects to the support stand 262 may be formed or a flexible or rigid material configured to contact the polishing pad 30 when lowered and configured to sweep fluid deposited by the nozzle 40 toward an outer edge and therefore off of a top surface of the polishing pad 30.

[0069]Referring to FIGS. 4 and 5, to allow triggering of the polishing process to occur, the temperature of the polishing pad 230 may be controlled by controlling the temperature of the platen 220. For example, in some embodiments, the controller can be configured to cause the polishing to begin only after the temperature of the polishing pad 230 is within a certain range. Solution discharged by the first nozzle 240 may be separated from slurry solution on the polishing pad 230 by the nozzle barrier 260, such that the temperature of the polishing pad 230 may be efficiently controlled while the polishing process is performed. Accordingly, the efficiency and speed of the polishing process of the polishing process apparatus 200 may be improved.

[0070]Referring to FIGS. 4 and 6, in the polishing process apparatus 300 illustrated in FIG. 6, the first nozzle group 340 may have a structure different from that of the first nozzle 240 in FIG. 4. Specific example embodiments of the polishing process apparatus 300 other than the structure of the first nozzle group 340 may be similar to the example embodiment described with reference to FIGS. 4 and 6.

[0071]Referring to FIG. 6, a first nozzle group 340 may include a cooling nozzle 342 and a heating nozzle 344. As used herein, the phrase “at least one nozzle” or “at least one temperature-control nozzle” refers to either a single nozzle or a plurality of nozzles, configured to discharge one or more streams of fluid, each stream being a flow of fluid, a spray of fluid, or another type of discharge (e.g., dripping) of fluid. The cooling nozzle 342 and the heating nozzle 344 may be disposed linearly in the X-axis direction in FIG. 6. The heating nozzle 344 may be disposed closer to the nozzle barrier 360 than the cooling nozzle 342. However, an example embodiment thereof is not limited thereto.

[0072]When the temperature of the polishing pad 330 is higher than the target temperature, the controller may control the cooling nozzle 342 to discharge cooling fluid to the upper surface of the polishing pad 330, thereby lowering the temperature of the polishing pad 330. When the temperature of the polishing pad 330 is lower than the target temperature, the controller may control the heating nozzle 342 to discharge heating fluid to the upper surface of the polishing pad 330, thereby increasing the temperature of the polishing pad 330.

[0073]In the first nozzle group 340 of the example embodiment illustrated in FIG. 6, cooling fluid and heating fluid may be discharged separately through the cooling nozzle 342 and the heating nozzle 344, respectively. The cooling nozzle 342 and the heating nozzle 344 may be controlled by the controller. The cooling nozzle 342 may be connected to a cooling fluid reservoir in which cooling fluid is stored through piping, and the heating nozzle 344 may be connected to a heating fluid reservoir in which heating fluid is stored through piping. The controller may control each of the cooling nozzle 342 and the heating nozzle 344, such that cooling fluid and heating fluid may be discharged separately. Also, when using two separate nozzles to control the temperature, the controller may select an appropriate amount of heating fluid and cooling fluid to dispense from each nozzle to achieve a desired temperature effect.

[0074]As compared to the first nozzle 240 in FIG. 4, the time required to control the temperature of fluid for the first nozzle group 340 may be shortened, and the reaction speed according to control of the controller may become higher. Accordingly, the temperature of the polishing pad 330 may be controlled swiftly.

[0075]FIG. 7 is a flowchart illustrating operations of a polishing process apparatus according to an example embodiment.

[0076]A polishing process apparatus according to an example embodiment may include a carrier, a platen, a polishing pad, a nozzle portion, a pad conditioner, a temperature sensor, and a controller. The nozzle portion may include a first nozzle configured to discharge fluid to an upper surface of the polishing pad, a second nozzle configured to discharge slurry solution to the upper surface of the polishing pad, and a nozzle barrier. Specific example embodiments of the polishing process apparatus may be similar to the example embodiments described with reference to FIGS. 1 to 6.

[0077]The temperature conditions of the polishing pad may include a process basic temperature range and a process target temperature range. While the temperature of the polishing pad is maintained within the process basic temperature range, the polishing process may be triggered. The process target temperature range may be the range in which the temperature of the polishing pad 130 may need to be maintained while the polishing process is performed. The platen target temperature range may be the temperature range of the platen to maintain the temperature of the polishing pad to be within the process basic temperature range. Specific example embodiments therefor may be similar to the example embodiment described with reference to FIG. 3.

[0078]First, referring to FIG. 7, temperature conditions of the polishing pad and the platen may be determined and calculated (S110 and S120). A process basic temperature and a process target temperature of the polishing pad may be determined, and accordingly, the process basic temperature range and the process target temperature range may be determined (S100). Thereafter, the platen target temperature may be calculated from the process basic temperature, and accordingly, the platen target temperature range may be calculated (S110). For example, when a higher process basic temperature is advantageous for the polishing process, the platen target temperature may be raised, and in some cases, may be higher than the process basic temperature (e.g., some, but not all, heat may transfer from the platen to the polishing pad so that the temperature of the polishing pad is lower than the temperature of the platen). As another example, when a lower process basic temperature is advantageous for the polishing process, the platen target temperature may be lowered, and in some cases, may be lower than the process basic temperature (e.g., some, but not all, of the lower temperature may transfer from the platen to the polishing pad so that the temperature of the polishing pad is higher than the temperature of the platen). However, example embodiments are not limited thereto.

[0079]The temperature conditions of the polishing pad and the platen may be stored in the controller. Before performing the polishing process, the controller may control the platen temperature to be within the platen target temperature range (S120). The controller may control the temperature of the platen using a plurality of fluid circulation channels or a plurality of thermoelectric elements included in the platen, but example embodiments are not limited thereto.

[0080]As the temperature of the platen is controlled, the temperature of the polishing pad may change. The controller may calculate the temperature of the polishing pad using an output of a temperature sensor. The controller may determine whether the calculated temperature of the polishing pad has reached and is maintained within the process basic temperature range (S130). If the temperature of the polishing pad is not within the process basic temperature range (NO in S130), the controller may continue to control the temperature of the platen to be within the platen target temperature range (S120) without allowing a polishing process for the polishing target to begin. After the temperature of the polishing pad reaches, and while the temperature is maintained in, the process basic temperature range (YES in S130), the controller may trigger the polishing process for the polishing target (S140).

[0081]While the polishing process is performed, the controller may maintain the temperature of the polishing pad to be within the process target temperature range (S160). In this case, the controller may control the temperature of the polishing pad by controlling fluid discharged from the first nozzle to the upper surface of the polishing pad. When the polishing process has not ended (NO in S170), the controller may continue the polishing process by maintaining the temperature of the polishing pad to be within the process target temperature range (S160). When the polishing process is finished (YES in S170), the controller may end the controlling of the temperature of the platen and the polishing pad.

[0082]In the description below, the method of controlling the temperature of the polishing pad by the controller while the polishing process is performed will be described.

[0083]FIGS. 8 and 9 are flowcharts illustrating controlling temperature of a polishing pad of a polishing process apparatus according to an example embodiment.

[0084]Referring to FIGS. 8 and 9, when the temperature of the polishing pad is the same as the process target temperature (YES in S200, YES in S300), the controller may continue the polishing process without controlling fluid. When the temperature of the polishing pad is different from the process target temperature (NO in S200, NO in S300), the controller may control fluid (S210 to S250, S310 to S350).

[0085]Referring to FIG. 8 as an example embodiment, when the temperature of the polishing pad is higher than the process target temperature (YES in S210), the controller may increase the supply amount of fluid discharged from the first nozzle (S220). For example, initially, at step S200, no fluid is supplied, or a particular amount of fluid is supplied. If at that time a fluid is supplied, it may be at the process target temperature or lower. However, as the temperature of the polishing pad increases, as a result of the detected increase in temperature, more fluid may be supplied (e.g., the fluid may be supplied at a greater rate than previously). The greater amount of fluid may be automatically controlled based on the detected temperature. Accordingly, the temperature of the polishing pad may decrease (S230). The fluid may be implemented as fluid for cooling the polishing pad. Referring to the embodiment FIG. 6, for example, the first nozzle may correspond to the cooling nozzle 342. In other embodiments, the first nozzle may part of a single-nozzle system that supplies fluid at a controlled temperature.

[0086]When the temperature of the polishing pad is lower than the process target temperature (NO in S210), the controller may reduce the supply amount of fluid discharged from the first nozzle (S240). Accordingly, the temperature of the polishing pad may increase (S250). The fluid may be implemented as fluid for cooling the polishing pad. Referring to FIG. 6, the first nozzle may correspond to the cooling nozzle 342.

[0087]Referring to FIG. 9 as an example embodiment, when the temperature of the polishing pad is higher than the process target temperature (YES in S310), the controller may reduce the temperature of fluid discharged from the first nozzle (S320). Accordingly, the temperature of the polishing pad may decrease (S330). The fluid may correspond to fluid for cooling the polishing pad. Referring to FIG. 6, the first nozzle being used to supply the fluid may be changed from the heating nozzle 344 to the cooling nozzle 342. Or, in some embodiments, less of the fluid from the heating nozzle 344 may be supplied while more of the fluid from the cooling nozzle 342 is supplied.

[0088]When the temperature of the polishing pad is lower than the process target temperature (NO in S310), the controller may increase the temperature of fluid discharged from the first nozzle (S340). Accordingly, the temperature of the polishing pad may increase (S350). The fluid may be implemented as fluid for heating the polishing pad. Referring to FIG. 6, the first nozzle may be changed from the cooling nozzle 342 to the heating nozzle 344. Or, in some embodiments, more of the fluid from the heating nozzle 344 may be supplied while less of the fluid from the cooling nozzle 342 is supplied.

[0089]FIG. 10 is a diagram illustrating changes in temperature of a polishing pad according to an example embodiment.

[0090]Specific example embodiments of the polishing process apparatus may be similar to the example embodiments described with reference to FIGS. 1 to 9. FIG. 10 illustrates the temperature of the polishing pad over time in an example embodiment and a comparative example. The polishing process apparatus in the example embodiment controls the temperature of the polishing pad to be within a specific range by controlling the temperature of the platen and separating solutions supplied to the upper surface of the polishing pad using a nozzle barrier to prevent the solutions from mixing.

[0091]The polishing process apparatus in the comparative example, which is different from the example embodiment, does not control the temperature of the platen and does not include a nozzle barrier, such that fluid and slurry solution supplied to the upper surface of the polishing pad is mixed. Accordingly, to reduce dilution of slurry solution, the temperature of the polishing pad may be controlled using a small amount of fluid. Accordingly, the polishing process apparatus in the comparative example may have relatively low performance in controlling temperature of the polishing pad.

[0092]FIG. 10 illustrates the temperature of the polishing pad with respect to performance time of the polishing process. The unit of performance time of the polishing process may be millisecond (msec), and the unit of temperature of the polishing pad may be centigrade (° C.).

[0093]At initial time point 0, the temperature of the polishing pad in the example embodiment and the comparative example may be initial temperature TO, which may be the same. The initial temperature TO may correspond to the temperature of the polishing pad when the controller does not control the temperature of the platen and the polishing pad.

[0094]First, referring to the example embodiment, from initial time point 0 until the polishing process ends, the controller in the example embodiment may control the temperature of the platen to be within the platen target temperature range. The example embodiment illustrated in FIG. 10 may correspond to the example in which a high process basic temperature is advantageous for the polishing process. Accordingly, the platen target temperature may be higher than the process basic temperature, and as the platen temperature is controlled, the temperature of the polishing pad may increase. The temperature of the polishing pad in the example embodiment may increase to process basic temperature Tstr before 0th time point T0 and may be maintained within the process basic temperature range.

[0095]At 0th time point T0, the controller may trigger the polishing process. As the polishing process is performed, the temperature of the polishing pad may increase and may reach the process target temperature Tpr at first time point t1. A distance between the 0th time point T0 and the first time point t1 may be controlled by the process basic temperature TO.

[0096]From the first time point t1, the controller may control the first nozzle to maintain the temperature of the polishing pad within the process target temperature range. Specific example embodiments may be similar to the example embodiment described with reference to FIGS. 8 and 9. In this case, the difference between the process target temperature Tpr and the process basic temperature Tstr when the polishing process is triggered may be defined as first process temperature range Trg1. Since the example embodiment may determine the process target temperature Tpr and the process basic temperature Tstr, the first process temperature range Trg1 may also be controlled.

[0097]Referring to the comparative example, from the initial time point 0 until the polishing process ends, the controller in the comparative example may not control the temperature of the platen. Accordingly, until the 0th time point T0 when the polishing process is triggered, the temperature of the polishing pad may be maintained in a specific range from the initial temperature TO.

[0098]At 0th time point T0, the controller may trigger the polishing process. As the polishing process is performed, the temperature of the polishing pad may increase and may reach the process target temperature Tpr at second time point t2. Since the comparative example does not control the temperature of the platen, a distance between the 0th time point T0 and the second time point t2 may not be controlled.

[0099]From the second time point t2, the controller may control the temperature of the polishing pad by controlling the first nozzle. In this case, a difference between the process target temperature Tpr and the initial temperature TO when the polishing process is triggered may be defined as the second process temperature range Trg2. The second process temperature range Trg2 may be wider than the first process temperature range Trg1, and the second process temperature range Trg1 may not be controlled.

[0100]The comparative example may not include a nozzle barrier, such that fluid and slurry solution supplied to the upper surface of the polishing pad may be mixed. Accordingly, to reduce dilution of slurry solution, the temperature of the polishing pad may be controlled using a small amount of fluid. That is, since performance of controlling the temperature of the polishing pad is lower than in the example embodiment, the range of changes in temperature of the polishing pad after the second time point t2 when the target process temperature Tpr is reached may be greater than in the example embodiment.

[0101]FIG. 11 is a diagram illustrating changes in temperature of a polishing pad according to example embodiments.

[0102]Specific example embodiments of the polishing process apparatus may be similar to the example embodiments described with reference to FIGS. 1 to 10. FIG. 11 illustrates the temperature of the polishing pad over time for each of example embodiments. Specifically, the drawings indicate changes in temperature of the polishing pad according to the platen target temperature for the time period before the temperature of the polishing pad is controlled by the first nozzle after the polishing process is triggered.

[0103]FIG. 11 illustrates the temperature of the polishing pad with respect to performance time of the polishing process. The unit of performance time of the polishing process may be msec, and the unit of temperature of the polishing pad may be ° C.

[0104]In the polishing process apparatus in this example embodiment, the temperature of the polishing pad may reach a process basic temperature by controlling the temperature of the platen. Thereafter, when the temperature of the polishing pad is maintained within the process basic temperature range, the polishing process may be triggered.

[0105]Referring to FIG. 11, the platen target temperature in example embodiment 1 may be lower than the platen target temperature in example embodiment 2. For example, the platen target temperature in example embodiment 1 may be 5.0° C., and the platen target temperature in example embodiment 2 may be 20.0° C. However, example embodiments are not limited thereto.

[0106]First, referring to example embodiment 1, after the temperature of the polishing pad reaches the process target temperature due to the temperature of the platen, the temperature of the polishing pad may be maintained within the process target temperature range. The polishing process may be triggered at 0th time point T0, and first temperature t1 of the polishing pad at this time may correspond to the process target temperature range. For example, the first temperature t1 may correspond to 14.0° C.

[0107]From 0th time point T0 to second time point t2, the temperature of the polishing pad may increase as the polishing process is performed. The temperature of the polishing pad may reach the second temperature t2 at the second time point t2, and the second temperature t2 may be the process target temperature. Thereafter, the temperature of the polishing pad may be maintained within the process target temperature range by the first nozzle. As an example, the second temperature t2 may correspond to 20.0° C.

[0108]Referring to example embodiment 2, the temperature of the polishing pad may reach the process target temperature due to the temperature of the platen, and the temperature of the polishing pad may be maintained within the process target temperature range. The polishing process may be triggered at the 0th time point T0, and the third temperature T3 of the polishing pad at this time may correspond to the process target temperature range. For example, the third temperature T3 may correspond to 18.9° C.

[0109]From the 0th time point T0 to the second time point t2, the temperature of the polishing pad may increase as the polishing process is performed. The temperature of the polishing pad may reach the fourth temperature T4 at the second time point t2, and the fourth temperature T4 may be the process target temperature. Thereafter, the temperature of the polishing pad may be maintained within the process target temperature range by the first nozzle. For example, the fourth temperature T4 may correspond to 24.9° C.

[0110]When comparing example embodiment 1 with example embodiment 2, when the platen target temperature is lowered, the process basic temperature and the process target temperature may also be lowered. In this case, lowered temperature amounts of the process basic temperature and the process target temperature may be the same. For example, when the platen target temperature is lowered by 15.0° C., each of the process basic temperature and the process target temperature may be lowered by about 5.0° C. Therefore, the process basic temperature and the process target temperature may be changed in parallel depending on the platen target temperature. Accordingly, by controlling the temperature of the platen, the process basic temperature and the process target temperature of the polishing pad may be controlled.

[0111]FIGS. 12 and 13 are diagrams illustrating changes in temperature of a polishing pad according to example embodiments.

[0112]Specific example embodiments of the polishing process apparatus may be similar to the example embodiments described with reference to FIGS. 1 to 11. FIGS. 12 and 13 illustrate the temperature of the polishing pad over time in an example embodiment and a comparative example. Specifically, the drawings indicate changes in temperature of the polishing pad for the time when the temperature of the polishing pad is controlled by the first nozzle after the polishing process is triggered. FIGS. 12 and 13 illustrate the temperature of the polishing pad with respect to performance time of the polishing process. The unit of performance time of the polishing process may be second (sec), and the unit of temperature of the polishing pad may be ° C.

[0113]The polishing process apparatus in this example embodiment controls the temperature of the polishing pad to be within a specific range by separating solutions supplied to an upper surface of the polishing pad using a nozzle barrier to prevent the solutions from mixing. Accordingly, the efficiency of controlling temperature of the polishing pad may be increased by supplying a large amount of fluid.

[0114]The polishing process apparatus in the comparative example, which is different from the example embodiment, may not include a nozzle barrier, such that fluid and slurry solution supplied to the upper surface of the polishing pad may be mixed. Accordingly, to reduce dilution of slurry solution, the temperature of the polishing pad may be controlled using a small amount of fluid. Accordingly, the polishing process apparatus in the comparative example may have low performance in controlling temperature of the polishing pad.

[0115]First, referring to FIG. 12, at 0th time point T0, the temperature of the polishing pad in the example embodiment and the comparative example may be the same as the third temperature T3. The third temperature T3 may be higher than the process target temperature, and for example, the third temperature T3 may correspond to 55° C. According to the example embodiment and the comparative example, the polishing process apparatus may control the first nozzle to lower the temperature of the polishing pad from 0th time point T0.

[0116]Referring to the example embodiment, the temperature of the polishing pad may decrease to first temperature t1 at second time point t2. For example, fluid discharged from the first nozzle may correspond to deionized water at 25° C., and the first temperature t1 may correspond to 27° C. Referring to the comparative example, the temperature of the polishing pad at second time point t2 may decrease to second temperature t2. For example, fluid discharged from the first nozzle may include a small amount of deionized water and gas at 25° C., and the second temperature t2 may correspond to 40° C.

[0117]Accordingly, the polishing process apparatus in this example embodiment may be more efficient in lowering the temperature of the polishing pad than in the comparative example. For example, a cooling speed from 0th time point T0 to the first time point t1 in the example embodiment may be 4.0° C./s, and a cooling speed in the comparative example may be 1.6° C./s, which may be lower than the example embodiment.

[0118]Referring to FIG. 13, at 0th time point T0, the temperature of the polishing pad in the example embodiment and the comparative example may be first temperature t1, which may be the same. The first temperature t1 may be lower than the process target temperature, for example, the first temperature t1 may correspond to 20° C. According to the example embodiment and the comparative example, the polishing process apparatus may control the first nozzle to increase the temperature of the polishing pad from the 0th time point T0.

[0119]Referring to the example embodiment, the temperature of the polishing pad at the second time point t2 may increase to the third temperature T3. For example, fluid discharged from the first nozzle may correspond to deionized water at 45° C., and the third temperature T3 may correspond to 37° C. Referring to the comparative example, the temperature of the polishing pad at second time point t2 may increase to second temperature t2. For example, fluid discharged from the first nozzle may include a small amount of deionized water and gas at 45° C., and the second temperature t2 may correspond to 29° C.

[0120]Accordingly, the polishing process apparatus in this example embodiment may be more efficient in increasing the temperature of the polishing pad than the comparative example. For example, a heating speed from 0th time point T0 to the first time point t1 in the example embodiment may be 4.0° C./s, and a heating speed in the comparative example may be 1.6° C./s, which may be lower than the example embodiment.

[0121]The example embodiment may include a nozzle barrier, thereby improving performance of the polishing process by preventing dilution of slurry solution, and by supplying a large amount of deionized water as fluid, performance of controlling temperature of the polishing pad may be improved.

[0122]FIGS. 14 to 17 are diagrams illustrating a polishing process and part of a method of manufacturing a semiconductor device performed in a polishing process apparatus according to an example embodiment.

[0123]Referring to FIGS. 14 to 17, a polishing target 600, a target of the polishing process, may include a semiconductor substrate 610 and a plurality of layers 620-640 laminated (e.g., formed) on the semiconductor substrate 610. For example, the semiconductor substrate 610 may be provided and then a plurality of layers 620-640 including an uppermost layer may be formed on the semiconductor substrate 610. The polishing process may be performed on the target layer 640, the uppermost layer among the plurality of layers 620-640. For example, in one embodiment, the target layer 640 may be formed of a conductive material.

[0124]FIG. 14 illustrates the polishing target 600 before the polishing process starts. Referring to FIG. 14, before the polishing process starts, the target layer 640 may have various thicknesses depending on positions of the polishing target 600. For example, the polishing process described with reference to FIGS. 14 to 17 may be performed to expose patterns of the third layer 630 by removing part of the target layer 640.

[0125]The polishing process apparatus according to this example embodiment may control the temperature of the platen to be maintained in a platen target temperature range. Accordingly, the temperature of the polishing pad may reach a process basic temperature range. The controller of the polishing process apparatus may trigger the polishing process for the target layer 640 when the temperature of the polishing pad is maintained within the process basic temperature range (e.g., after the temperature has reached the process basic temperature range and while the temperature remains in the process basic temperature range).

[0126]As an example, referring to FIG. 15, during a first time period after the polishing process starts, the target layer 640 may be removed to have a predetermined first thickness t1. Before the first time period, the temperature of the polishing pad may increase from the process basic temperature range and may reach the process target temperature. From the time the temperature of the polishing pad reaches the process target temperature until the polishing process ends, the controller of the polishing process apparatus may control the temperature of the polishing pad to be maintained in the process target temperature range.

[0127]In the example embodiment illustrated in FIG. 16, during a second time period after the polishing process starts, a portion of the target layer 640 may be removed by first thickness change ΔT1, such that a thickness of the target layer 640 may be reduced from a first thickness t1 to a second thickness t2. The third layer 630 may be exposed in the other portion of the target layer 640.

[0128]Thereafter, referring to FIG. 17, after a third time period, the target layer 640 may be removed by second thickness change ΔT2, such that the third layer 630 may be exposed in the entirety of regions of the polishing target 600. According to the example embodiment, the controller may determine that the polishing process has been completed in each of the plurality of regions.

[0129]The controller in this example embodiment may control the temperature of the platen and may separate solutions supplied to the upper surface of the polishing pad using a nozzle barrier to prevent the solutions from mixing, thereby maintaining the temperature of the polishing pad to be within a specific range, thereby increasing the efficiency and speed of the polishing process may be improved. For example, during the steps shown in FIGS. 14, 15, 16, and 17, cooling fluid may be supplied to a top surface of the polishing pad 30, and the cooling fluid may be blocked by the nozzle barrier 60 from mixing with a slurry solution. Accordingly, erosion or dishing may not occur on the target layer.

[0130]FIG. 18 is a diagram illustrating a structure of a semiconductor apparatus according to an example embodiment. FIGS. 19 to 23 are cross-sectional diagrams taken along line I-I′ in FIG. 18, illustrating a polishing process performed in a polishing process apparatus according to an example embodiment.

[0131]FIG. 18 is a plan diagram illustrating a portion of a semiconductor apparatus 700 according to an example embodiment. Referring to FIG. 18, the semiconductor apparatus 700 may include a cell region CELL and a peripheral circuit region PERI, and the cell region CELL may include a cell array region CAR and a cell contact region CTR. For example, in the cell array region CAR, channel structures CH may be disposed, and in the cell contact region CTR, cell contacts CMC may be disposed. In the example embodiment illustrated in FIG. 18, the cell contact region CTR may be disposed between the cell array region CAR and the peripheral circuit region PERI.

[0132]Referring to FIGS. 18 and 23 together, the cell array region CAR may include gate electrode layers 710 and insulating layers 720, which may be laminated (e.g., formed) in the first direction (Z-axis direction) perpendicular to an upper surface of the substrate 701, and channel structures CH extending in the first direction and penetrating the gate electrode layers 710 and the insulating layers 720. Each of the channel structures CH may include a channel layer 702 connected to the substrate 701, a gate dielectric layer 703 disposed between the channel layer 702 and the gate electrode layers 710, and a drain region 704. The gate dielectric layer 703 may include a tunneling layer, a charge storage layer, and a blocking layer, and at least one of the layers included in the gate dielectric layer 703 may be formed to surround the gate electrode layers 710. The drain region 704 may be connected to at least one of bitlines BL through a bitline contact 705, and the bitlines BL may be connected to a page buffer formed in the peripheral circuit region PERI.

[0133]The cell contact region CTR may include the cell contacts CMC connected to the gate electrode layers 710, and dummy channel structures DCH. The dummy channel structures DCH may have the same structure as the channel structures CH, but differently from the channel structures CH, the dummy channel structures DCH may not be connected to the bitlines BL. The gate electrode layers 710 may form a step difference in at least one of the second direction (X-axis direction) and the third direction (Y-axis direction) parallel to the upper surface of the substrate 701 in the cell contact region CTR, the cell contacts CMC may be connected to the gate electrode layers 710 and may be connected to a row decoder formed in the peripheral circuit region PERI by wordlines 763. The wordlines 763 may be formed within the interlayer insulating layer 780 formed in the cell region CELL and the peripheral circuit region PERI.

[0134]The row decoder formed in the peripheral circuit region PERI may be disposed adjacent to the cell region CELL in the second direction. Referring to FIG. 21, the row decoder may include devices, for example, low-voltage devices LVTR. Each device may include a gate structure 750 and a source/drain region 760. The devices may provide pass devices directly connected to the wordlines 763 through a vertical contact VC. A device contact 771 and lower interconnections 772 may be connected to the source/drain region 760, and the gate structure 750 may also be connected to the gate contact.

[0135]A polishing process performed in a polishing process apparatus according to an example embodiment will be described with reference to FIGS. 19 to 22. Referring to FIGS. 19 to 22, a semiconductor apparatus 700 may be a polishing target. After the polishing process for the target layer 790 of the semiconductor apparatus 700 is completed, cell contacts CMC and vertical contacts VC may be formed.

[0136]FIG. 19 illustrates the semiconductor apparatus 700 before the polishing process starts. Referring to FIG. 19, before the polishing process starts, the target layer 790 may have various thicknesses depending on positions of the semiconductor apparatus 700. For example, the polishing process described with reference to FIGS. 19 to 22 may be provided to remove the target layer 790 to expose the interlayer insulating layer.

[0137]The polishing process apparatus according to the example embodiment may control a temperature of the platen to be maintained in the platen target temperature range. Accordingly, the temperature of the polishing pad may reach a process basic temperature range. The controller of the polishing process apparatus may trigger the polishing process for the target layer 790 when the temperature of the polishing pad is maintained within the process basic temperature range.

[0138]As an example, referring to FIG. 20, during a first time period after the polishing process starts, the target layer 790 may be removed to have a predetermined first thickness t1. Before the first time period, the temperature of the polishing pad may increase from the process basic temperature range and may reach the process target temperature. From the time the temperature of the polishing pad reaches the process target temperature until the polishing process ends, the controller of the polishing process apparatus may control the temperature of the polishing pad to be maintained in the process target temperature range.

[0139]In the example embodiment illustrated in FIG. 21, during a second time period after the polishing process starts, a portion of the target layer 790 may be removed by first thickness change ΔT1, such that a thickness of the target layer 790 may be reduced from a first thickness T1 to a second thickness T2. However, the interlayer insulating layer may be exposed in the other portion of the target layer 790.

[0140]Thereafter, referring to FIG. 22, after a third time period, the target layer 790 may be removed by second thickness change ΔT2, such that the interlayer insulating layer may be exposed in the entirety of regions of the semiconductor apparatus 700. According to the example embodiment, the controller may determine that the polishing process has been completed in each of the plurality of regions.

[0141]After the polishing process of the example embodiment illustrated in FIG. 22 is completed, the semiconductor apparatus 700 in the example embodiment illustrated in FIG. 23 may be manufactured through a series of semiconductor processes. The controller in the example embodiment may control the temperature of the platen and separating solutions supplied to the upper surface of the polishing pad using a nozzle barrier to prevent the solutions from mixing, such that the temperature of the polishing pad may be maintained within a specific range and the efficiency and speed of the polishing process may thus be improved. Also, by reducing erosion or dishing on the target layer, the issue of reduced reliability due to poor electrical connection of the semiconductor apparatus 700 may be prevented.

[0142]According to the aforementioned example embodiments, by controlling the temperature of the platen and separating solutions supplied to the upper surface of the polishing pad using a nozzle barrier to prevent the solutions from mixing, the temperature of the polishing pad may be maintained within a specific range and the efficiency and speed of the polishing process may be improved.

[0143]While the example embodiments have been illustrated and described above, it will be configured as apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the example embodiments.